BAR81W

BAR81... Silicon RF Switching Diode • Designed for use in shunt configuration in high performance RF switches • High shunt signal isolation • Low shunt insertion loss • Optimized for short - open transformation using λ/4 lines • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAR81W " !  Type BAR81W Package SOT343 Configuration single shunt-diode LS(nH) 0.15* Marking BBs * series inductance chip to ground Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation Ts ≤ 138°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point2) 1Pb-containing 2For Symbol VR IF Ptot Tj Top Tstg Value 30 100 100 150 -55 ... 125 -55 ... 150 Unit V mA mW °C Symbol RthJS Value ≤ 120 Unit K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 BAR81... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance I F = 5 mA, f = 100 MHz Charge carrier life time I F = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω I-region width Shunt Insertion loss1) I F = 10 mA, f = 1.89 GHz Shunt isolation1) VR = 3 V, f = 1.89 GHz Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF Symbol min. IR VF - Values typ. 0.93 max. 20 1 Unit nA V CT rf τ rr pF 0.6 0.57 0.7 80 1 0.9 1 Ω - ns WI IL ISO - 3.5 30 0.7 - µm dB 1For more information please refer to Application Note 049. 2 2007-04-19 BAR81... Diode capacitance CT = ƒ (VR) f = Parameter Reverse parallel resistance RP = ƒ(V R) f = Parameter 10 4 KOhm pF 100 MHz 1 10 3 0.8 CT 0.7 Rp 10 2 1 GHz 1.8 GHz 0.6 1 Mhz ... 1.8 GHz 10 1 0.5 0.4 10 0 0.3 10 -1 0 0.2 0 2 4 6 8 10 12 14 16 V 20 2 4 6 8 10 12 14 16 V 20 VR VR Forward resistance rf = ƒ (IF ) f = 100MHz 10 1 Forward current IF = ƒ (VF) TA = Parameter 10 0 A 10 -1 Ohm 10 -2 rf 10 0 IF 10 -3 10 -4 -40 °C 25 °C 85 °C 125 °C 10 -5 10 -1 -2 10 10 -1 10 0 10 1 mA 10 2 10 -6 0 0.2 0.4 0.6 0.8 V 1.2 IF VF 3 2007-04-19 BAR81... Forward current IF = ƒ (T S) BAR81W Permissible Puls Load R thJS = ƒ (tp) BAR81W 10 3 120 mA K/W 100 90 R thJS 80 10 2 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tP Permissible Pulse Load IFmax / I FDC = ƒ (tp ) 10 2 BAR81W IFmax/IFDC - 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tP 4 2007-04-19 Package SOT343 BAR81... Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 5 2007-04-19 BAR81... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-19