BAR88-07L4

BAR88... Silicon PIN Diode • Optimized for low current antenna switches in hand held applications • Very low forward resistance (typ. 1.5 Ω @ IF = 1 mA) • Low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.28 pF) • Very low signal distortion BAR88-02L BAR88-02V BAR88-07L4 4 3 BAR88-099L4 4 3 1 2 D1 D2 D1 D2 1 2 1 2 Type BAR88-02L BAR88-02V BAR88-07L4* BAR88-099L4* Package TSLP-2-1 SC79 TSLP-4-4 TSLP-4-4 Configuration single, leadless single parallel pair, leadless anti-parallel pair, leadless LS(nH) 0.4 0.6 0.4 0.4 Marking UU U UT US * Preliminary Data Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation BAR88-02L, -07L4, -099L4 Ts ≤ 133°C BAR88-02V, Ts ≤ 123°C Junction temperature Operating temperature range Storage temperature Tj Top Tstg Symbol VR IF Ptot 250 250 150 -55 ... 125 -55 ... 150 °C Value 80 100 Unit V mA mW 1 Dec-08-2003 BAR88... Thermal Resistance Parameter Junction - soldering point 1) BAR88-02L, 07L4, -099L4 BAR88-02V Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I (BR) = 5 µA Reverse current VR = 60 V Forward voltage I F = 1 mA I F = 100 mA 1For Symbol RthJS Value ≤ 65 ≤ 105 Unit K/W Symbol min. V(BR) IR VF 80 - Values typ. max. 50 Unit V nA V 0.75 0.95 0.9 1.2 calculation of RthJA please refer to Application Note Thermal Resistance 2 Dec-08-2003 BAR88... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Forward resistance IF = 1 mA, f = 100 MHz IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω I-region width Insertion loss1) IF = 1 mA, f = 1.8 GHz IF = 5 mA, f = 1.8 GHz IF = 10 mA, f = 1.8 GHz Isolation1) VR = 0 V, f = 0.9 GHz VR = 0 V, f = 1.8 GHz VR = 0 V, f = 2.45 GHz 1BAR88-02L Symbol min. CT RP rf τ rr Values typ. max. Unit pF 0.3 0.4 0.28 0.25 65 2.5 1.5 1.5 0.8 0.6 500 0.4 kΩ Ω 2.5 ns - WI |S 21| 2 - 13 -0.11 -0.07 -0.06 -15 -11 -9 - µm dB |S 21| 2 - in series configuration, Z = 50Ω 3 Dec-08-2003 BAR88... Diode capacitance CT = ƒ (VR) f = Parameter 0.5 pF Reverse parallel resistance RP = ƒ(V R) f = Parameter 10 4 KOhm 10 3 0.4 0.35 1 MHz 100 MHz 1 GHz 1.8 GHz 100 MHz CT Rp 10 2 1 GHz 0.3 10 1 1.8 GHz 0.25 0.2 10 0 0.15 10 -1 0 0.1 0 2 4 6 8 10 12 14 16 V 20 2 4 6 8 10 12 14 16 V 20 VR VR Forward resistance rf = ƒ (IF ) f = 100MHz 10 2 Forward current IF = ƒ (VF) TA = Parameter 10 0 A 10 -1 10 -2 Ohm 10 1 10 -3 IF 10 -4 10 -5 -40°C +25°C +85°C +125°C rf 10 0 10 -6 10 -7 10 -8 10 -1 -2 10 10 -1 10 0 10 1 mA 10 2 10 -9 0 0.2 0.4 0.6 0.8 V VF 1.2 IF 4 Dec-08-2003 BAR88... Forward current IF = ƒ (T S) BAR88-02L, -07L4, -099L4 120 mA 100 90 80 Forward current IF = ƒ (T S) BAR88-02V 120 mA 100 90 80 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Permissible Puls Load R thJS = ƒ (tp) BAR88-02L, -07L4, -099L4 10 2 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAR88-02L, -07L4, -099L4 10 2 K/W IFmax/IFDC RthJS 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 °C 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 °C 10 0 tp tp 5 Dec-08-2003 BAR88... Permissible Puls Load R thJS = ƒ (tp) BAR88-02V 10 K/W 3 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAR88-02V 10 2 10 2 I Fmax/IFDC 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 R thJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 °C 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 °C 10 0 tp tp Insertion loss |S21|2 = ƒ(f) IF = Parameter BAR88-02L in series configuration, Z = 50Ω 0 dB Isolation |S21|2 = ƒ(f) VR = Paramter BAR88-02L in series configuration, Z = 50Ω 0 dB -0.1 |S21|2 |S21|2 10 mA 5 mA 1 mA 0.5 mA 0.1 mA -10 -0.15 -0.2 -15 -0.25 -20 -0.3 -25 -0.35 0V 1V 10 V -0.4 0 1 2 3 4 GHz 6 -30 0 1 2 3 4 GHz 6 f f 6 Dec-08-2003