BAR89_07

BAR89... Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1GHz (typ. 0.19 pF) • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAR89-02LRH  Type BAR89-02LRH Package TSLP-2-7 Configuration single, leadless LS(nH) 0.4 Marking R Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation Ts ≤ 133°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point2) 1Pb-containing 2For Symbol VR IF Ptot Tj Top Tstg Value 80 100 250 150 -55 ... 125 -55 ... 150 Unit V mA mW °C Symbol RthJS Value ≤ 65 Unit K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 BAR89... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 5 µA Reverse current VR = 60 V Forward voltage IF = 10 mA IF = 100 mA VF 0.83 0.95 0.9 1.1 V IR 50 nA V(BR) 80 V Symbol min. Values typ. max. Unit 2 2007-04-19 BAR89... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Forward resistance I F = 1 mA, f = 100 MHz I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Charge carrier life time I F = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω I-region width Insertion loss1) I F = 1 mA, f = 1.8 GHz I F = 5 mA, f = 1.8 GHz I F = 10 mA, f = 1.8 GHz Isolation1) VR = 0 V, f = 0.9 GHz VR = 0 V, f = 1.8 GHz VR = 0 V, f = 2.45 GHz 1BAR89-02LRH Symbol min. CT RP rf - Values typ. max. Unit pF 0.25 0.25 0.19 0.18 0.35 kΩ 35 5 3.5 - Ω 3 1.2 0.8 800 1.5 ns τ rr - WI IL - 19 0.23 0.1 0.08 - µm dB ISO 19 14 11 - in series configuration, Z = 50Ω 3 2007-04-19 BAR89... Diode capacitance CT = ƒ (VR) f = Parameter Reverse parallel resistance RP = ƒ(V R) f = Parameter 10 3 KOhm 0.5 pF 0.4 10 2 0.35 1 MHz 100 MHz 1 GHz 1.8 GHz CT Rp 10 1 0.3 0.25 10 0 0.2 100 MHz 1 GHz 1.8 GHz 0.15 10 -1 0 0.1 0 2 4 6 8 10 12 14 16 V 20 2 4 6 8 10 12 14 16 V 20 VR VR Forward resistance rf = ƒ (IF ) f = 100MHz 10 3 Ohm Forward current IF = ƒ (VF) TA = Parameter 1A 0 0 10 -1 10 -2 10 -3 10 2 10 -4 10 -5 10 -6 10 1 -40°C +25°C +85°C +125°C rf 10 0 IF 10 -7 10 -8 10 -1 -2 10 10 -1 10 0 10 1 10 2 mA 10 3 10 -9 0 0.2 0.4 0.6 0.8 V VF 1.2 IF 4 2007-04-19 BAR89... Forward current IF = ƒ (T S) BAR89-02LRH Permissible Puls Load R thJS = ƒ (tp) BAR89-02LRH 10 2 120 mA mA 100 90 RthJS 80 10 1 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 10 -1 -6 10 10 -5 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -4 10 -3 10 -2 °C 10 0 TS tp Permissible Pulse Load IFmax / I FDC = ƒ (tp ) BAR89-02LRH 10 2 Insertion loss IL = -|S21| 2 = ƒ(f) IF = Parameter BAR89-02LRH in series configuration, Z = 50Ω 0 dB mA -0.1 |S21| -0.15 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10mA 5mA 1mA IF -0.2 -0.25 -0.3 -0.35 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 °C 10 1 -0.4 0 1 2 3 4 GHz 6 tp f 5 2007-04-19 BAR89... Isolation ISO = -|S21|2 = ƒ(f) VR = Parameter BAR89-02LRH in series configuration, Z = 50Ω 0 dB |S 21| -10 -15 -20 0V 1V 10 V -25 -30 0 1 2 3 4 GHz 6 f 6 2007-04-19 Package TSLP-2-7 BAR89... Package Outline Top view 0.39 +0.01 -0.03 0.05 MAX. 0.65 ±0.05 Bottom view 0.6 ±0.05 2 2 1 1 Cathode marking 0.5 ±0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.35 0.45 0.3 0.925 1 0.275 0.275 0.375 0.6 Copper Solder mask 0.35 Stencil apertures Marking Layout (Example) BAR90-02LRH Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 mm = 50.000 Pieces/Reel (optional) 4 1.16 0.5 Cathode marking 0.76 8 0.25 ±0.035 1) 1±0.05 7 2007-04-19 BAR89... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-04-19