BAR90-081LS

BAR90-081LS Silicon Trench PIN Diode Array • Optimized for low bias current antenna switches in hand held applications • Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF) • Low forward resistance (typ. 1.3 Ω @ IF = 3 mA) • Improved ON / OFF mode harmonic distortion balance • Very small form factor: 1.34 x 0.74 x 0.31 mm³ • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BAR90-081LS 8 7 6 5 1 2 3 4 Type BAR90-081LS Package TSSLP-8-1 Configuration quad array LS(nH) 0.2 Marking WM Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation TS ≤ 137 °C Junction temperature Operating temperature range Storage temperature Tj Top Tstg 150 -55 ... 125 -55 ... 150 °C Symbol VR IF Ptot Value 80 100 150 Unit V mA mW 1 2009-01-26 BAR90-081LS Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 90 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 5 µA Reverse current VR = 60 V Forward voltage IF = 3 mA IF = 100 mA 1For Symbol min. V(BR) IR VF 0.75 80 - Values typ. max. 50 Unit V nA V 0.81 0.9 0.87 1 calculation of RthJA please refer to Application Note Thermal Resistance 2 2009-01-26 BAR90-081LS Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Forward resistance I F = 1 mA, f = 100 MHz I F = 3 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Charge carrier life time I F = 10 mA, measured at I R = 3 mA, IR = 6 mA, RL = 100 Ω I-region width Insertion loss1) I F = 1 mA, f = 1.8 GHz I F = 3 mA, f = 1.8 GHz I F = 10 mA, f = 1.8 GHz Isolation1) VR = 0 V, f = 0.9 GHz VR = 0 V, f = 1.8 GHz VR = 0 V, f = 2.45 GHz 1Single Symbol min. CT RP rf τ rr Values typ. max. Unit pF 0.25 0.3 0.19 0.18 35 5 4 2 1.3 0.8 750 0.35 kΩ Ω 2.3 ns - WI IL - 20 0.16 0.11 0.08 18.5 13.5 11.5 - µm dB ISO - BAR90 diode in series configuration, Z = 50 Ω 3 2009-01-26 BAR90-081LS Diode capacitance CT = ƒ (VR) f = Parameter 0.5 pF Reverse parallel resistance RP = ƒ(V R) f = Parameter 10 4 KOhm 10 3 0.4 100 MHz CT 0.35 Rp 10 2 0.3 0.25 1 MHz 100 MHz 1 GHz 1.8 GHz 1 GHz 10 1 1.8 GHz 0.2 10 0 0.15 10 -1 0 0.1 0 2 4 6 8 10 12 14 16 V 20 2 4 6 8 10 12 14 16 V 20 VR VR Forward resistance rf = ƒ (I F) f = 100 MHz 10 1 Forward current IF = ƒ (VF) TA = Parameter 10 -1 A Ohm 10 -2 10 -3 10 0 10 -4 IF rf 10 -5 -40°C +25 °C +85 °C +125 °C 10 -1 -1 10 10 0 10 1 mA 10 2 10 -6 0.2 0.4 0.6 0.8 V 1.2 IF VF 4 2009-01-26 BAR90-081LS Forward current IF = ƒ (T S) 120 mA 100 90 80 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 °C 150 TS Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load IFmax / I FDC = ƒ (t p) 10 2 10 2 10 1 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 IFmax/IFDC - RthJS 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 2009-01-26 BAR90-081LS Insertion loss |S21|2 = ƒ(f) IF = Parameter Single BAR90 diode in series configuration, Z = 50Ω 0 dB dB Isolation |S21|2 = ƒ(f) VR = Parameter Single BAR90 diode in series configuration, Z = 50Ω 0 -0.1 |S 21|² |S 21|² 10mA 3mA 1mA 0.5mA -10 -0.15 -0.2 -15 -0.25 -20 -0.3 -25 -0.35 0V 1V 10 V 1 2 3 4 GHz -0.4 0 1 2 3 4 GHz 6 -30 0 6 f f 6 2009-01-26 Package TSSLP-8-1 BAR90-081LS 7 2009-01-26 BAR90-081LS Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2009-01-26