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BAS116_07

BAS116_07

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BAS116_07 - Silicon Low Leakage Diode - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BAS116_07 数据手册
BAS116... Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAS116 !  Type BAS116 Parameter Diode reverse voltage Peak reverse voltage Forward current Package SOT23 Configuration single Symbol VR VRM IF IFSM 4.5 0.5 Ptot Tj Tstg 370 150 -65 ... 150 Value 80 85 250 Marking JVs Unit V mA A Maximum Ratings at TA = 25°C, unless otherwise specified Non-repetitive peak surge forward current t = 1 µs t=1s Total power dissipation TS ≤ 54°C Junction temperature Storage temperature mW °C Thermal Resistance Parameter Junction - soldering point 2) BAS116 1Pb-containing 2For Symbol RthJS Value ≤ 260 Unit K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 BAS116... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics 85 V Breakdown voltage V(BR) I(BR) = 100 µA Reverse current VR = 75 V VR = 75 V, TA = 150 °C Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA , RL = 100 Ω Test circuit for reverse recovery time D.U.T. IR VF 900 1000 1100 1250 5 80 nA mV CT trr - 2 0.6 1.5 pF µs Puls generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph ΙF Oscillograph: R = 50Ω , tr = 0.35ns, C ≤ 1pF EHN00022 2 2007-04-19 BAS116... Reverse current IR = ƒ (TA) VR = Parameter 10 2 nA BAS 116 EHB00053 Forward Voltage VF = ƒ (TA) IF = Parameter 1.5 V max BAS 116 EHB00056 ΙR 10 1 VF 1.0 10 2 typ 10 -1 0.5 10 -2 Ι F = 150 mA 50 mA 10 mA 1 mA 0.1 mA 10 -3 0 50 100 TA ˚C 150 0 0 50 100 TA ˚C 150 Forward current IF = ƒ (VF) TA = 25°C 150 BAS 116 EHB00054 Forward current IF = ƒ (T S) BAS116 ΙF 300 mA mA 250 225 100 IF 200 175 typ max 150 125 50 100 75 50 25 0 0 0.5 1.0 V VF 1.5 0 0 15 30 45 60 75 90 105 120 °C 150 TS 3 2007-04-19 BAS116... Permissible Puls Load RthJS = ƒ (tp) Permissible Pulse Load IFmax / I FDC = ƒ (t p) 10 3 10 2 10 2 I Fmax/IFDC - 10 1 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TP TP 4 2007-04-19 Package SOT23 BAS116... Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 5 2007-04-19 BAS116... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-19
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