BAS125-06W

BAS125W Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage


1 3 2 1 BAS125W BAS125-04W 3 3 EHA07002 VSO05561 BAS125-05W 3 BAS125-06W 3 1 2 EHA07005 1 2 EHA07004 1 2 EHA07006 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAS125W BAS125-04W BAS125-05W BAS125-06W 13s 14s 15s 16s 1=A 1 = A1 1 = A1 1 = C1 2 n.c. 2 = C2 2 = A2 2 = C2 3=C 3 = C1/A2 3 = C1/2 3 = A1/2 SOT323 SOT323 SOT323 SOT323 Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t 100 s) Total power dissipation BAS125W, TS = 93 °C BAS 125-04W...06W Junction temperature Storage temperature , TS = 84 °C Symbol VR IF IFSM Ptot Ptot Tj Top Tstg Value 25 100 500 250 250 150 -55 ... 150 -55 ... 150 mW °C Unit V mA Operating temperature range Thermal Resistance Junction - soldering point1) BAS125W BAS125-04W...06W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1


RthJS 230 265 K/W Nov-15-2001 BAS125W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz IF = 5 mA, f = 10 kHz Differential forward resistance CT Rf Symbol min. IR VF - Values typ. max. Unit nA 385 530 800 100 150 mV 400 650 950 - 16 1.1 - pF 2 Nov-15-2001
BAS125W Forward current IF = f (TS ) BAS125W 100 mA 80 70 IF 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) BAS125W 10 3 Permissible Pulse Load IFmax / I FDC = f (t p) BAS125W 10 2 K/W IFmax / IFDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 3 Nov-15-2001 BAS125W Forward current IF = f (TS ) BAS125-04W...06W ( IF per diode) 100 mA 80 70 IF 60 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) BAS125-04W...06W 10 3 Permissible Pulse Load IFmax / IFDC = f (tp) BAS125-04W...06W 10 2 K/W IFmax / IFDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Nov-15-2001 BAS125W Forward current IF = f (VF ) TA = Parameter 10 2 BAS 125... EHD07115 Diode capacitance CT = f (VR) f = 1MHz BAS 125... EHD07117 1.0 CT pF 0.8 ΙF mA 10 1 TA = -40C 25 C 85 C 150 C 0.6 10 0 0.4 10 -1 0.2 10 -2 0.0 0.5 V VF 1.0 0.0 0 10 V VR 20 Reverse current IR = f (VR ) TA = Parameter 10 1 BAS 125... EHD07116 Differential forward resistance rf = f (IF ) f = 10 kHz 10 4 rf Ω 10 3 BAS 125... EHD07118 ΙR µA 10 0 TA = 125 C TA = 85 C 10 -1 10 2 10 -2 TA = 25 C 10 1 10 -3 0 10 V VR 20 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 ΙF 5 Nov-15-2001