BAS125-07

BAS125-07W Silicon Schottky Diode 3 For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage


4 2 1 4 3 1 2 EHA07008 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS125-07W Maximum Ratings Parameter Diode reverse voltage Forward current Marking 17s 1 = C1 Pin Configuration 2 = C2 3 = A2 4 = A1 Package SOT343 Symbol VR IF IFSM Ptot Tj Tstg Value 25 100 500 250 150 -55 ... 150 Unit V mA mW °C Surge forward current (t 100 s) Total power dissipation , TS = 96 °C Junction temperature Storage temperature Maximum Ratings Junction - soldering point1) RthJS 1For calculation of R thJA please refer to Application Note Thermal Resistance 

215 K/W 1 Aug-16-2001 BAS125-07W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Rf Unit max. nA typ. IR VF 385 530 800 400 650 950 100 150 mV CT - 16 1.1 - pF IF = 5 mA, f = 10 kHz 2 Aug-16-2001
Differential forward resistance BAS125-07W Forward current IF = f (VF ) TA = Parameter 10 2 BAS 125... EHD07115 Total power dissipation Ptot = f(TS) 100 mA ΙF mA 80 10 1 10 0 TA = -40C 25 C 85 C 150 C 70 IF 60 50 40 30 20 10 10 -1 10 -2 0.0 0.5 V VF 1.0 0 0 15 30 45 60 75 90 105 120 °C 150 TS Reverse current IR = f (VR ) TA = Parameter 10 1 BAS 125... EHD07116 Differential forward resistance rf = f (IF) f = 10 kHz 10 4 rf Ω 10 3 BAS 125... EHD07118 ΙR µA 10 0 TA = 125 C TA = 85 C 10 -1 10 2 10 -2 TA = 25 C 10 1 10 -3 0 10 V VR 20 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 ΙF 3 Aug-16-2001 BAS125-07W Diode capacitance CT = f (VR) f = 1MHz BAS 125... EHD07117 1.0 CT pF 0.8 0.6 0.4 0.2 0.0 0 10 V VR 20 4 Aug-16-2001