BAS19

BAS19...BAS21 Silicon Switching Diodes High-speed, high-voltage switching applications 3 1For calculation of RthJA please refer to Application Note Thermal Resistance 1

1 2 1 3 EHA07002 VPS05161 Type BAS19 BAS20 BAS21 Maximum Ratings Parameter Diode reverse voltage BAS19 BAS20 BAS21 Peak reverse voltageBAS19 BAS20 BAS21 Forward current Peak forward current Total power dissipation TS = 70 °C Junction temperature Storage temperature Thermal Resistance Parameter Marking JPs JRs JSs 1=A 1=A 1=A Pin Configuration 2 = n.c. 2 = n.c. 2 = n.c. 3=C 3=C 3=C Package SOT23 SOT23 SOT23 Symbol VR Value 100 150 200 Unit V VRM 120 200 250 IF IFM Ptot Tj Tstg 250 625 350 150 -65 ... 150 mW °C mA Symbol RthJS Value Unit Junction - soldering point1) 230 K/W Aug-06-2001 BAS19...BAS21 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 100 µA, BAS19 I(BR) = 100 µA, BAS20 I(BR) = 100 µA, BAS21 Reverse current VR = VRmax VR = VRmax , TA = 150 °C Forward voltage IF = 100 mA IF = 200 mA AC Characteristics Diode capacitanceVR = 0 V, f = 1 MHz Reverse recovery time IF = 30 mA, IR = 30 mA, measured at IR = 3 mA, trr 50 ns CT 5 pF Symbol min. V(BR) 120 200 250 IR VF - Values typ. max. Unit V µA 0.1 100 V 1 1.25 Test circuit for reverse recovery time EHN00018 2 Aug-06-2001
 ΙF Oscillograph Oscillograph: R = 50 , tr = 0.35 ns, C  
D.U.T. RL = 100 Pulse generator: tp = 1 s, D = 0.05, tr = 0.6 ns, Ri = 50 1 pF BAS19...BAS21 Reverse current IR = VR = Parameter 10 2 µA BAS 19...21 IF = Parameter EHB00027 1.5 V BAS 19...21 ΙR 10 1 5 max VF 1.0 typ. 10 0 5 0.5 10 -1 5 10 -2 0 50 100 TA ˚C 150 0.0 0 50 TA = 25 °C 800 mA 700 600 500 400 300 200 100 BAS 19...21 TA = 25 °C EHB00028 10 2 BAS 19...21 ΙF Ι FM A 10 1 D = 0.005 0.01 0.02 0.05 0.1 0.2 10 0 10 -1 tp D= T 0 0.0 0.5 1.0 V VF 1.5 10-2 10-6 10-5 10-4 10-3 3   Forward current IF = (VF) Peak forward current IFM =  (TA ) Forward Voltage VF = (TA)  EHB00029 Ι F = 625 mA 250 mA 100 mA 10 mA 100 TA ˚C 150 (tp) EHB00032 tp T 10-2 10-1 s 100 t Aug-06-2001 BAS19...BAS21 Reverse voltage VR = (TA ) Permissible Pulse Load 300 V BAS 19...21 EHB00031 10 2 200 BAS 21 IFmax/IFDC VR BAS 20 10 1 100 BAS 19 0 0 50 100 TA ˚C 150 10 0 -6 10 10 10 3 10 2 RthJS 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2  Permissible Puls Load RthJS = (tp ) D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 s 10 0 tP 4  -5  IFmax / IFDC = (tp ) D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -4 10 -3 10 -2 s 10 0 tP Aug-06-2001