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BAS40_07

BAS40_07

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BAS40_07 - Silicon Schottky Diode - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BAS40_07 数据手册
BAS40.../BAS140W Silicon Schottky Diode • General-purpose diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAS140W BAS40-02L BAS40 ! BAS40-04 ! BAS40-05 BAS40-05W ! BAS40-06 BAS40-06W !  , , , , , ,     BAS40-07 BAS40-07W " ! , ,  ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BAS140W BAS40 BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07 BAS40-07W 1Pb-containing Package SOD323 SOT23 TSLP-2-1 SOT23 SOT23 SOT323 SOT23 SOT323 SOT143 SOT343 Configuration single single single, leadless series common cathode common cathode common anode common anode parallel pair parallel pair LS(nH) 1.8 1.8 0.4 1.8 1.8 1.4 1.8 1.4 2 1.6 Marking white 4 43s FF 44s 45s 45s 46s 46s 47s 47s package may be available upon special request 1 2007-04-19 BAS40.../BAS140W Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Non-repetitive peak surge forward current t ≤ 10ms Total power dissipation BAS140W, TS ≤ 113°C BAS40, BAS40-07, TS ≤ 81°C BAS40-02L, TS ≤ 127°C BAS40-04, BAS40-06, TS ≤ 56°C BAS40-06W, TS ≤ 106°C BAS40-05, TS ≤ 31°C BAS40-05W, TS ≤ 98°C BAS40-07W, TS ≤ 118°C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BAS140W BAS40, BAS40-07 BAS40-02L BAS40-04, BAS40-06 BAS40-06W BAS40-05 BAS40-05W BAS40-07W 1For Symbol VR IF I FSM Ptot Value 40 120 200 Unit V mA mW 250 250 250 250 250 250 250 250 Tj T op T stg 150 -55 ... 125 -55 ... 150 °C Symbol RthJS Value ≤ 150 ≤ 275 ≤ 90 ≤ 375 ≤ 175 ≤ 475 ≤ 205 ≤ 125 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-04-19 BAS40.../BAS140W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 10 µA Reverse current VR = 30 V Forward voltage IF = 1 mA IF = 10 mA IF = 40 mA Forward voltage matching1) IF = 10 mA ∆ VF VF 250 350 600 310 450 720 380 500 1000 20 mV IR 1 µA V(BR) 40 V Symbol min. Values typ. max. Unit AC Characteristics Diode capacitance VR = 0 , f = 1 MHz Differential forward resistance I F = 10 mA, f = 10 kHz Charge carrier life time I F = 25 mA 1∆V CT RF τ rr - 3 10 - 5 100 pF Ω ps F is the difference between lowest and highest V F in a multiple diode component. 3 2007-04-19 BAS40.../BAS140W Diode capacitance CT = ƒ (VR) f = 1MHz BAS 40... EHB00040 Forward resistance rf = ƒ (I F) f = 10 kHz 10 3 rf Ω BAS 40... EHB00041 5 CT pF 4 10 2 3 2 10 1 1 0 0 10 20 V VR 30 10 3 0.1 1 10 mA 100 ΙF Reverse current IR = ƒ (TA) VR = Parameter 10 -4 A Reverse current IR = ƒ(VR) TA = Parameter BAS 40... EHB00039 10 3 ΙR µA 10 2 TA = 150 C 10 -5 IR 10 1 10 -6 85 C 10 0 10 -7 VR = 40V 30V 20V 10V 10 -1 25 C 10 -8 0 25 50 75 100 °C 150 10 -2 0 10 20 30 V VR 40 TA 4 2007-04-19 BAS40.../BAS140W Forward Voltage VF = ƒ (TA) IF = Parameter 0.8 V Forward current IF = ƒ (VF) TA = Parameter 10 2 BAS 40... EHB00038 ΙF mA 10 1 0.6 0.5 0.4 IF = 40 mA 10 mA 1 mA 0.1 mA 10 µA 1 µA VF 10 0 0.3 TA = -40 ˚C 25 ˚C 85 ˚C 150 ˚C 0.2 10 -1 0.1 0 -50 -25 0 25 50 75 100 °C 150 10-2 0.0 0.5 1.0 V VF 1.5 TA Forward current IF = ƒ (T S) BAS140W Forward current IF = ƒ (T S) BAS40, BAS40-07 140 mA 140 mA 100 100 IF 80 IF 80 60 60 40 40 20 20 0 0 90 105 120 °C 0 0 15 30 45 60 75 150 15 30 45 60 75 90 105 120 °C 150 TS TS 5 2007-04-19 BAS40.../BAS140W Forward current IF = ƒ (T S) BAS40-02L Forward current IF = ƒ (T S) BAS40-04, BAS40-06 140 mA 140 mA 100 100 IF 80 IF 80 60 60 40 40 20 20 0 0 90 105 120 °C 0 0 15 30 45 60 75 150 15 30 45 60 75 90 105 120 °C 150 TS TS Forward current IF = ƒ (T S) BAS40-06W Forward current IF = ƒ (T S) BAS40-05 140 mA 140 mA 100 100 IF 80 IF 80 60 60 40 40 20 20 0 0 90 105 120 °C 0 0 15 30 45 60 75 150 15 30 45 60 75 90 105 120 °C 150 TS TS 6 2007-04-19 BAS40.../BAS140W Forward current IF = ƒ (T S) BAS40-05W Forward current IF = ƒ (T S) BAS40-07W 140 mA 140 mA 100 100 IF 80 IF 80 60 60 40 40 20 20 0 0 90 105 120 °C 0 0 15 30 45 60 75 150 15 30 45 60 75 90 105 120 °C 150 TS TS Permissible Puls Load RthJS = ƒ (tp) BAS140W Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAS140W R thJS 5 K/W BAS 140W EHD07165 Ι F max Ι F DC 10 2 5 BAS 140W EHD07166 tp tp D= T T 10 2 5 D= 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 tp tp D= T 10 0 10 -6 10 -5 10 1 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 T -3 10 -4 10 10 -2 s tp 10 0 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 7 2007-04-19 BAS40.../BAS140W Permissible Puls Load RthJS = ƒ (tp) BAS40-02L 10 2 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAS40-02L 10 1 I Fmax/IFDC K/W RthJS 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BAS40-06W 10 3 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAS40-06W 10 2 K/W 10 2 IFmax/IFDC - RthJS 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 2007-04-19 BAS40.../BAS140W Permissible Puls Load RthJS = ƒ (tp) BAS40-05W 10 3 Permissible Pulse Load IFmax / I FDC = ƒ (t p) BAS40-05W 10 2 K/W 10 2 I Fmax/IFDC - RthJS 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -5 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 9 2007-04-19 Package SOD323 BAS40.../BAS140W Package Outline 0.9 +0.2 -0.1 +0.2 1.25 -0.1 0 ±0.05 A 1.7 +0.2 -0.1 +0.05 0.3 -0.2 2 Cathode marking 1 0.3 +0.1 -0.05 0.25 M A 0.45 ±0.15 2.5 ±0.2 0.15 +0.1 -0.06 Foot Print 0.6 Marking Layout (Example) 0.8 1.7 0.8 BAR63-03W Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 2 2.9 8 Cathode marking 0.65 1.35 1 10 2007-04-19 Package SOT143 BAS40.../BAS140W Package Outline 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.4 ±0.15 10˚ MAX. 1 2 10˚ MAX. 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 1.7 0.25 M B 0.08...0.1 A 5 0...8˚ 0.2 M A Foot Print 0.8 1.2 0.8 0.9 1.2 0.8 0.8 Marking Layout (Example) Manufacturer RF s Pin 1 56 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.9 1.1 2005, June Date code (YM) BFP181 Type code 4 0.2 Pin 1 3.15 2.6 8 1.15 11 2007-04-19 Package SOT23 BAS40.../BAS140W Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 12 2007-04-19 Package SOT323 BAS40.../BAS140W Package Outline 2 ±0.2 0.3 +0.1 -0.05 3 1.25 ±0.1 2.1 ±0.1 0.9 ±0.1 3x 0.1 M 0.1 MAX. 0.1 A 1 0.65 0.65 2 0.1 MIN. 0.15 +0.1 -0.05 0.2 M A Foot Print 0.6 0.8 0.65 0.65 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BCR108W Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 13 2007-04-19 Package TSLP-2-1 BAS40.../BAS140W Package Outline Top view 0.05 MAX. 2 0.4 +0.1 Bottom view 0.6 ±0.05 0.65±0.05 2 1 1 1) 1) Cathode marking 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.45 0.275 0.6 0.35 0.35 0.925 0.3 1 Copper Solder mask Stencil apertures Marking Layout (Example) BAS16-02L Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 mm = 50.000 Pieces/Reel (optional) 4 0.5 1.16 Cathode marking 0.76 8 0.275 0.375 0.25 ±0.035 0.5 ±0.035 1 ±0.05 14 2007-04-19 BAS40.../BAS140W Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 15 2007-04-19
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