BAS40_11

BAS40 HiRel Silicon Schottky Diode        HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Hermetically sealed microwave package Space Qualified ESA/SCC Detail Spec. No.: 5512/020 Type Variant No. 03 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS40-T1 (ql) Marking - Ordering Code see below Pin Configuration Package T1 1 2 (ql) Quality Level: P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) I FAG IMM RPD D HIR 1 of 3 V 2, February 2011 BAS40 Maximum Ratings Parameter Reverse Voltage Forward Current Surge Forward Current Power Dissipation 2) 1) Symbol VR IF IFSM Ptot Top Tstg Tsol Tj Rth(j-c) Values 40 120 170 250 -55 to +150 -55 to +150 +250 150 100 Unit V mA mA mW °C °C °C °C K/W Operating Temperature Range Storage Temperature Range Soldering Temperature Junction Temperature Thermal Resistance Junction-Case Electrical Characteristics at TA=25°C; unless otherwise specified Parameter 3) Symbol min. Values typ. max. Unit DC Characteristics Reverse Current 1, VR=40V Reverse Current 2, VR=30V Forward Voltage 1, IF1=1mA Forward Voltage 2, IF2=10mA Forward Voltage 3, IF3=40mA Differential Forward Resistance IF=10mA, IF=15mA AC Characteristics Total Capacitance VR=0V; f=1MHz Notes.: 1.) t  10ms, Duty Cycle=10% 2.) At TCASE = 125 °C. For TCASE > 125 °C derating is required. 3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. VF 4) IR1 IR2 VF1 VF2 VF3 RFD 0,29 0,42 0,68 7,5 0,33 0,45 0,7 10 10 1 0,39 0,54 0,85 11,5 µA µA V V V  CT 2,2 2,9 5,0 pF 4.) RFD=---------------5x10-3 A I FAG IMM RPD D HIR 2 of 3 V 2, February 2011 BAS40 T1 Package X1 B Y1 Y2 C 2 A Symbol A B C D E F G H 1 F D E G G H Millimetre min max 1,30 1,45 1,15 1,35 0,40 0,10 0,50 0,30 0,06 0,10 5,50 0,40 0,60 Edition 2011-02 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2011 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. I FAG IMM RPD D HIR 3 of 3 V 2, February 2011