BAS70_07

BAS70... HiRel Silicon Schottky Diode • HiRel Discrete and Microwave Semiconductor • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • Hermetically sealed microwaver package • esa Space Qualified ESA/SCC Detail Spec. No.: 5512/020 Type Variante No. 01 BAS70-T1 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BAS70-T1 Package T1 Configuration single Marking - (ql) Testing level: P: Professional testing H: High Rel quality S: Space quality ES: ESA qualified Maximum Ratings Parameter Symbol VR IF I FSM Ptot T op T sol T stg Value Unit Reverse voltage Forward current Surge forward current1) Total power dissipation2) Operating temperature range Soldering temperature3) Storage temperature 1t≤10ms, 2At 3During 70 70 85 250 -55 ... 150 250 -55 ... 150 V mA mA mW °C °C °C duty Cycle =10% TCASE = 125°C. For TCASE > 125°C derating is required 5 sec. maximum. The terminal shall not be resoldered until 3 minutes have elapsed. 1 2007-08-20 BAS70... Thermal Resistance Parameter Thermal resistance junction-case Symbol Rth(j-c) Value 100 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current 1 IR1 2 VR1 = 70 V Unit µA Reverse current 2 VR2 = 56 V IR2 VF1 - - 0.1 V Forward Voltage 1 0.3 0.6 0.8 Forward Voltage 2 IF2 = 10 mA VF1 0.38 0.7 0.85 0.44 0.78 1 0.3 0.6 0.8 0.38 0.7 0.85 30 0.44 0.78 1 32 Ω Differential Forward Resistance1) IF2 = 10 mA, IF3 = 15 mA RFD 24 AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz 1 CT 1.2 1.5 2 pF ∆ VF RFD=--------------------5x10-3 A 2 2007-08-20 BAS70... T1 Package 3 2007-08-20 BAS70... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 4 2007-08-20