BAS78B

BAS78A...BAS78D Silicon Switching Diodes Switching applications High breakdown voltage 4 Total power dissipation , TS = 124 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 1For calculation of R thJA please refer to Application Note Thermal Resistance


3 2 1 2, 4 1 EHA00004 VPS05163 Type BAS78A BAS78B BAS78C BAS78D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking BAS 78A BAS 78B BAS 78C BAS 78D 1=A 1=A 1=A 1=A Pin Configuration 2=C 2=C 2=C 2=C 3 = n.c. 4 = C 3 = n.c. 4 = C 3 = n.c. 4 = C 3 = n.c. 4 = C Package SOT223 SOT223 SOT223 SOT223 Symbol VR VRM IF IFM IFS Ptot Tj Tstg BAS 78A 50 50 BAS 78B 100 100 1 1 10 1.2 BAS 78C 200 200 BAS 78D 400 400 Unit V A Surge forward current, t = 1 s W °C 150 -65 ... 150
22 K/W 1 Aug-20-2001 BAS78A...BAS78D Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 µA BAS78A BAS78B BAS78C BAS78D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time trr , 1 CD 10 - Unit max. V typ. V(BR) 50 100 200 400 VF IR IR 1.6 2 1 50 - µA pF µs Test circuit for reverse recovery time DUT tr 10% tp t ΙF Oscillograph 90% VR 2

Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50
IF = 200 mA, IR = 200 mA, RL = 100 measured at IR = 200mA ΙF t rr t Ι R = 20 mA EHN00020 Oscillograph: R = 50 , tr = 0.35ns, C 1pF Aug-20-2001 BAS78A...BAS78D Forward current IF = f (TS ) Forward current IF = f (V F) TA = 25°C 10 1 BAS 78A...D EHB00047 1200 mA 1000 900 800 ΙF A 10 0 IF 700 600 500 400 300 200 100 0 0 15 30 45 60 75 90 105 120 °C 150 10 -1 10 -2 10 -3 0 1 V VF 2 TS Reverse current IR = f (TA) VR = VRmax BAS 78A...D EHB00048 10 5 nA ΙR 10 5 4 max 10 5 3 typ 10 2 5 10 1 0 50 100 TA C 150 3 Aug-20-2001