BAS79B

BAS79A...BAS79D Silicon Switching Diodes Switching applications High breakdown voltage Common cathode 4 Total power dissipation , TS = 114 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS 1For calculation of R thJA please refer to Application Note Thermal Resistance



3 2 2, 4 1 3 EHA00005 1 VPS05163 Type BAS79A BAS79B BAS79C BAS79D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking BAS 79A BAS 79B BAS 79C BAS 79D 1 = A1 1 = A1 1 = A1 1 = A1 Pin Configuration 2=C1/2 3 = A2 2=C1/2 3 = A2 2=C1/2 3 = A2 2=C1/2 3 = A2 Package 4=C1/2 SOT223 4=C1/2 SOT223 4=C1/2 SOT223 4=C1/2 SOT223 Symbol VR VRM IF IFM IFS Ptot Tj Tstg BAS 79A 50 50 BAS 79B 100 100 1 1 10 1.2 BAS 79C 200 200 BAS 79D 400 400 Unit V A Surge forward current, t = 1 s W °C 150 -65 ... 150
30 K/W 1 Aug-20-2001 BAS79A...BAS79D Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 µA BAS79A BAS79B BAS79C BAS79D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time trr , 1 CD 10 - Unit max. V typ. V(BR) 50 100 200 400 VF IR IR 1.6 2 1 50 - µA pF µs Test circuit for reverse recovery time DUT tr 10% tp t ΙF Oscillograph 90% VR 2

Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50  IF = 200 mA, IR = 200 mA, RL = 100 measured at IR = 200mA ΙF t rr t Ι R = 20 mA EHN00021 Oscillograph: R = 50 , tr = 0.35ns, C 1pF Aug-20-2001 BAS79A...BAS79D Forward current IF = f (TS ) Forward current IF = f (V F) TA = 25°C 10 1 BAS 79A...D EHB00050 1200 mA 1000 900 800 ΙF A 10 0 IF 700 600 500 400 300 200 100 0 0 15 30 45 60 75 90 105 120 °C 150 10 -1 10-2 10-3 0 1 V VF 2 TS Reverse current IR = f (TA) VR = VRmax 10 5 nA BAS 79A...D EHB00051 ΙR 10 4 5 typ. max 10 3 5 10 2 5 10 1 0 50 100 TA ˚C 150 3 Aug-20-2001