BAV74

BAV74 Silicon Switching Diode Array For high-speed switching applications Common cathode 3 Total power dissipation, TS = 35 °C Junction temperature Storage temperature Thermal Resistance 1For calculation of R thJA please refer to Application Note Thermal Resistance 1
Junction - soldering point1)


2 1 3 1 2 EHA07004 VPS05161 Type BAV74 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Marking JAs 1 = A1 Pin Configuration 2 = A2 3 = C1/2 Package SOT23 Symbol VR VRM IF IFS Ptot Tj Tstg Value 50 50 200 4.5 250 150 -65 ... 150 Unit V mA A mW °C Surge forward current, t = 1 s RthJS 460 K/W Jul-31-2001 BAV74 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 100 mA Reverse current VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time measured at IR = 1mA trr , 4 CD 2 IR 100 IR 0.1 VF 1 V(BR) 50 typ. max. Unit V µA pF ns Test circuit for reverse recovery time D.U.T. ΙF 2 
 Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50
IF = 10 mA, IR = 10 mA, RL = 100 Oscillograph EHN00019 Oscillograph: R = 50 , tr = 0.35ns, C 1pF Jul-31-2001 BAV74 Forward current IF = f (TS ) Reverse current IR = f (TA) 220 mA 10 5 nA BAV 74 EHB00070 180 160 ΙR 10 4 5 max. VR = 70 V IF 140 120 100 80 60 40 20 0 0 15 30 45 60 75 90 105 120 °C 150 10 3 5 typ. 70V 25V 10 2 5 10 1 0 50 100 TA ˚C 150 TS Forward current IF = f (VF ) TA = 25°C 150 BAV 74 EHB00071 Peak forward current IFM = f (t p) TA = 25°C 10 2 BAV 74 EHB00072 ΙF Ι FM mA A 10 1 D = 0.005 0.01 0.02 0.05 0.1 0.2 100 typ max 10 0 50 10 -1 tp D= T tp T 0 0 0.5 1.0 V VF 1.5 10-2 10-6 10-5 10-4 10-3 10-2 10-1 s 100 t 3 Jul-31-2001 BAV74 Forward voltage VF = f (TA) 1.0 V BAV 74 EHB00073 VF Ι F = 100 mA 10 mA 1 mA 0.1 mA 0.5 0 0 50 100 TA ˚C 150 4 Jul-31-2001