BAW101

BAW101... Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D1 D2 1 2 Type BAW101 Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Package SOT143 Configuration parallel Symbol VR VRM IF IFM IFS Ptot Tj Tstg Symbol RthJS Marking JPs Value 300 300 250 500 4.5 350 150 -65 ... 150 Value ≤ 330 Maximum Ratings at TA = 25°C, unless otherwise specified Unit V mA A mW °C Surge forward current, t = 1 µs Total power dissipation TS ≤ 35°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BAW101 1For Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 1 Sep-24-2003 BAW101... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics 300 V Breakdown voltage V(BR) I(BR) = 100 µA Reverse current VR = 250 V VR = 250 V, TA = 150 °C Forward voltage IF = 100 mA AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, measured at IR = 1mA, RL = 100 Ω Test circuit for reverse recovery time D.U.T. IR VF 0.15 50 1.3 µA V CT trr - 6 1 - pF µs Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50Ω Oscillograph ΙF Oscillograph: R = 50Ω, tr = 0.35ns, C ≤ 1pF EHN00019 2 Sep-24-2003 BAW101... Reverse current IR = ƒ (TA) VR = 250V 10 5 nA BAW 101 EHB00104 Forward Voltage VF = ƒ (TA) IF = Parameter 1 V ΙR 10 4 5 max. 0.9 100mA VF 0.85 10 3 5 typ. 0.8 0.75 10mA 10 2 5 0.7 0.65 10 1 0 50 100 ˚C TA 150 0.6 -40 -20 0 20 40 60 80 100 120 °C 150 TA Forward current IF = ƒ (VF) TA = 25°C 10 0 BAW 101 EHB00103 Forward current IF = ƒ (T S) BAW101 300 ΙF A mA 10 -1 5 IF 200 150 10-2 5 100 50 10-3 0 1.0 VF V 2.0 0 0 15 30 45 60 75 90 105 120 °C 150 TS 3 Sep-24-2003