BAW78B

BAW78A...BAW78D Silicon Switching Diodes Switching applications High breakdown voltage 1 2 3 Total power dissipation , TS = 125 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS 1For calculation of R thJA please refer to Application Note Thermal Resistance


2 VPS05162 2 1 EHA07007 Type BAW78A BAW78B BAW78C BAW78D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking GA GB GC GD 1=A 1=A 1=A 1=A Pin Configuration 2=C 2=C 2=C 2=C 3 = n.c. 3 = n.c. 3 = n.c. 3 = n.c. Package SOT89 SOT89 SOT89 SOT89 Symbol VR VRM IF IFM IFS Ptot Tj Tstg BAW 78A 50 50 BAW 78B 100 100 1 1 10 1 BAW 78C 200 200 BAW 78D 400 400 Unit V A Surge forward current, t = 1 s W °C 150 -65 ... 150
25 K/W 1 Aug-20-2001 BAW78A...BAW78D Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Breakdown voltage I(BR) = 100 µA BAW78A BAW78B BAW78C BAW78D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time measured at IR = 20mA trr , 1 µs CD 10 pF Symbol min. V(BR) 50 100 200 400 VF IR IR - Values typ. max. Unit V - - 1.6 2 1 50 µA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph 2

Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50  IF = 200 mA, IR = 200 mA, RL = 100 EHN00019 Oscillograph: R = 50 , tr = 0.35ns, C 1pF Aug-20-2001 BAW78A...BAW78D Forward current IF = f (TS ) Forward current IF = f (V F) TA = 25°C 10 1 BAW 78A...D EHB00095 1200 ΙF mA A 10 0 800 IF 600 10 -1 400 10 -2 200 0 0 25 50 75 100 °C 150 10 -3 0 1 V VF 2 TS Peak forward current IFM = f (tp ) TA = 25°C 10 2 BAW 78A...D EHB00096 Reverse current IR = f (TA) VR = VRmax 10 5 nA BAW 78A...D EHB00097 Ι FM A 10 1 D = 0.005 0.01 0.02 0.05 0.1 0.2 ΙR 10 4 5 max 10 0 10 3 5 typ. 10 -1 tp tp D= T T 10 2 5 10-2 10-6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 10 1 0 50 100 ˚C TA 150 t 3 Aug-20-2001