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BAY6642

BAY6642

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BAY6642 - HiRel Silicon Switching Diode - Infineon Technologies AG

  • 详情介绍
  • 数据手册
  • 价格&库存
BAY6642 数据手册
B AY6642 HiRel Silicon Switching Diode Target datasheet • • For high-speed switching applications Covers 1N6639 – 1N6643 Type BAY6642 Maximum Ratings Marking - Pin Configuration 1 Anode 2 Cathode Package HSL2-1808 at TA=25°C; unless otherwise specified Parameter W orking peak reverse voltage Average output rectified current 1) Forward surge current, t ≤ 10ms Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction to soldering point Rth JS Typ. 100 K/W Symbol VRWM IO IFSM Tj Top Tstg Values 75 300 2.5 175 -65...+175 -65...+175 Unit V mA A °C °C °C 1) For TA > 25 °C the derating of IO has to be considered. Nomograms will be available on request. 1 of 3 September 2009 B AY6642 Electrical Characteristics at TA=25°C; unless otherwise specified Parameter DC Characteristics Breakdown voltage, IR = -10 µA Reverse current VR = 75 V VR = 75 V, TA = 150°C D.C. Forward voltage I F = 1 mA IF = 10 mA IF = 100 mA IF = 500 mA AC Characteristics Total capacitance, VR = 0V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA measured at IR = 2 mA, RL = 100 Ω Forward recovery time, IF = 200 mA HSL2 Package: CT trr 4 2.5 pF ns VF 0.62 0.80 0.92 1.20 V V V V V(BR) IR 100 0.5 100 µA µA V Symbol min. Values typ. max. Unit tfr - - 10 ns S ymbol t ypical width [mm] A 4.6 B 2.0 C 1.3 D 0.7 r1 0.3 2 of 3 September 2009 B AY6642 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 3 of 3 September 2009
BAY6642
1. 物料型号: - 型号:BAY6642

2. 器件简介: - BAY6642是一款针对高速开关应用的硅开关二极管,覆盖1N6639至1N6643型号。

3. 引脚分配: - 引脚1:阳极(Anode) - 引脚2:阴极(Cathode)

4. 参数特性: - 工作峰值反向电压(VRWM):75V - 平均输出整流电流(Io):300mA - 正向浪涌电流(IFSM):2.5A(10ms) - 结温(Tj):175°C - 工作温度范围(Top):-65°C至+175°C - 存储温度范围(Tstg):-65°C至+175°C - 热阻(Junction to soldering point):典型值100K/W

5. 功能详解应用信息: - BAY6642具有高速开关能力,适用于需要快速响应的电路中。文档中提到,对于高于25°C的环境温度,需要考虑Io的降额,并提供降额曲线图(需请求)。

6. 封装信息: - 封装类型:HSL2-1808 - 封装尺寸:典型宽度4.6mm,长度2.0mm,高度1.3mm,翼展0.7mm,引脚间距0.3mm。
BAY6642 价格&库存

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