BB439_07

BB439... Silicon Variable Capacitance Diode • For VHF tuned circuit applications • High figure of merit • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BB439  Type BB439 Package SOD323 Configuration single LS(nH) 1.8 Marking white 2 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R ≥ 5kΩ ) Forward current Operating temperature range Storage temperature 1Pb-containing Symbol VR VRM IF Top Tstg Value 28 30 20 -55 ... 125 -55 ... 150 Unit V mA °C package may be available upon special request 1 2007-04-20 BB439... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 28 V VR = 28 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 25 V, f = 1 MHz CT Symbol min. IR - Values typ. max. Unit nA 20 200 pF 31.5 26.5 4.3 6 5 43 34.5 29 5.1 6.9 5.8 0.35 37.5 31.5 6 8 6.5 3 0.5 % Ω Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz CT2 /CT25 CT3 /CT25 Capacitance ratio VR = 3 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 3 V, VR = 25 V, f = 1 MHz ∆CT/CT rS Q Series resistance VR = 10 V, f = 100 MHz Figure of merit VR = 3 V, f = 50 MHz VR = 25 V, f = 200 MHz 1For - 280 600 - details please refer to Application Note 047. 2 2007-04-20 BB439... Diode capacitance CT = ƒ (VR) f = 1MHz BB 439 EHD07036 Temperature coefficient of the diode capacitance TCc = ƒ (VR) 10 -3 60 CT pF 50 1/°C TCc 10 -4 10 -5 0 10 40 30 20 10 0 10 -1 10 0 10 1 V VR 10 2 10 1 V 10 2 VR 3 2007-04-20 Package SOD323 BB439... Package Outline 0.9 +0.2 -0.1 +0.2 1.25 -0.1 0 ±0.05 A 1.7 +0.2 -0.1 +0.05 0.3 -0.2 2 Cathode marking 1 0.3 +0.1 -0.05 0.25 M A 0.45 ±0.15 2.5 ±0.2 0.15 +0.1 -0.06 Foot Print 0.6 Marking Layout (Example) 0.8 1.7 0.8 BAR63-03W Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 2 2.9 8 Cathode marking 0.65 1.35 1 4 2007-04-20 BB439... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 5 2007-04-20