BB644

BB644 /BB664... Silicon Variable Capacitance Diodes • For VHF TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure BB644 BB664/-02V 1 2 Type BB644 BB664 BB664-02V Package SOD323 SCD80 SC79 Configuration single single single LS(nH) 1.8 0.6 0.6 Marking yellow 4 44 4 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R ≥ 5kΩ Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 150 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V 1 Jun-01-2004 BB644 /BB664... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current Symbol min. Values typ. max. nA 10 100 Unit IR VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT pF 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 16.4 11.8 0.6 44.5 34.2 2.85 2.75 17.8 12.6 2 0.75 % Ω Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1/C T28 CT2/C T25 ∆CT/C T rS 15 11 - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Jun-01-2004 BB644 /BB664... Diode capacitance CT = ƒ (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = ƒ (VR) 10 -3 70 pF 60 55 50 1/°C CT 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 25 V TCC 10 -4 10 -5 0 10 35 10 1 V 10 2 VR VR Reverse current IR = ƒ(VR) TA = Parameter 10 -9 A 85°C IR 10 -10 25°C 10 -11 0 4 8 12 16 20 24 V 30 VR 3 Jun-01-2004