BB669

BB669 Silicon Tuning Diode 2 For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance Extremely small plastic SMD package Excellent uniformity and matching due to "in-line" matching assembly procedure VPS05176




1 Type BB669 Marking 1 Pin Configuration 1=C 2=A Package SOD323 Maximum Ratings Parameter Diode reverse voltage Forward current Storage temperature Peak reverse voltage (R 5k ) Symbol VR VRM IF Top Tstg Value 30 35 20 -55... 150 -55... 150 mA °C Unit V Operating temperature range 
1 Jul-05-2001 BB669 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 8 V, f = 470 MHz Series inductance Ls 1.8 1) In-line matching. For details please refer to Application Note 047 Symbol min. IR IR - Values typ. max. 10 200 Unit nA CT 51 39.6 2.6 2.5 CT2 /CT25 CT1 /CT28 CT /CT 14.5 18 56.5 43.4 2.8 2.7 15.5 20.9 0.85 61.5 47.2 3 2.9 17 23.3 2 - pF - 2 Jul-05-2001  nH
Capacitance ratio 1) % rs BB669 Diode capacitance CT = f (VR) f = 1MHz Reverse current IR = f (VR ) TA = Parameter 10 -9 60 pF 50 A 85°C 45 CT 40 35 30 25 20 15 10 5 0 0 4 8 12 16 20 24 V IR 10 -10 25°C 30 10 -11 0 5 10 15 20 V 30 VR VR Temperature coefficient of the diode capacitance TCc = f (VR) 10 -3 1/°C TCc 10 -4 10 -5 0 10 10 1 V 10 2 VR 3 Jul-05-2001