BBY51...
Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment
BBY51
BBY51-02L BBY51-02W BBY51-03W
3
D1
D2
1
2
1
2
Type BBY51 BBY51-02L* BBY51-02W BBY51-03W
Package SOT23 TSLP-2-1 SCD80 SOD323
Configuration common cathode single, leadless single single
LS(nH) 2 0.4 0.6 1.8
Marking S3s II II H
* Preliminary
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 7 20 -55 ... 125 -55 ... 150 Unit V mA °C
1
Dec-15-2003
BBY51...
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 6 V VR = 6 V, T A = 85 °C AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT
Symbol min. IR -
Values typ. max.
Unit
nA 10 200
pF 5.05 3.4 2.7 2.5 5.4 4.2 3.5 3.1 1.75 1.78 0.5 0.37 5.75 5.2 4.6 3.7 2.2 2.2 0.7 Ω
Capacitance ratio
VR = 1 V, VR = 4 V, f = 1 MHz
CT1/C T4 C1V-C 3V C3V-C 4V rS
1.55 1.4 0.3 -
Capacitance difference
VR = 1 V, f = 1 MHz, VR = 4 V
pF
Capacitance difference
VR = 3 V, f = 1 MHz, VR = 4 V
Series resistance
VR = 1 V, f = 1 GHz
2
Dec-15-2003
BBY51...
Diode capacitance CT = ƒ (VR)
f = 1MHz
EHD07128
Temperature coefficient of the diode capacitance TCc = ƒ (VR)
10 -3
10 CT pF 8
1/°C
6
TCc
10 -4 10 -5 1
4
2
0
0
2
4
V VR
6
2
3
4
5
6
V
8
VR
3
Dec-15-2003
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