BBY53

BBY53... Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03L BBY53 BBY53-05W 3 3 1 2 D1 D2 1 2 1 2 Type BBY53 BBY53-02L* BBY53-02V BBY53-02W BBY53-03L* BBY53-03W BBY53-05W Package SOT23 TSLP-2-1 SC79 SCD80 TSLP-3-1 SOD323 SOT323 Configuration common cathode single, leadless single single single, leadless single common cathode LS(nH) 2 0.4 0.6 0.6 0.4 1.8 1.4 Marking S7s LL L LL LL white/5 S7s * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 6 20 -55 ... 125 -55 ... 150 Unit V mA °C 1 Oct-13-2003 BBY53... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 4 V VR = 4 V, T A = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz rS 0.47 Ω CT1/CT3 CT 4.8 1.85 1.8 5.3 2.4 2.2 5.8 3.1 2.6 pF Symbol min. IR - Values typ. max. Unit nA 10 200 2 Oct-13-2003 BBY53... Diode capacitance CT = ƒ (VR) f = 1MHz Capacitance change ∆C = ƒ(TA) f = 1 MHz 5.25 % pF9 8.4 8 7.6 7.2 6.8 6.4 6 5.6 5.2 4.8 4.4 4 3.6 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0 3.75 3 3V 1V ∆C T 2.4 2.8 3.2 V CT 2.25 1.5 0.75 0 -0.75 -1.5 -2.25 -3 0.4 0.8 1.2 1.6 2 4 -3.75 -40 -20 0 20 40 60 °C 100 VR TA Temperature coefficient of the diode capacitance TCC = ƒ (VR ) f = 1 MHz 10 -2 1/°C TCC 10 -3 10 -4 0 0.5 1 1.5 2 2.5 3 V 4 VR 3 Oct-13-2003