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BBY58-03W

BBY58-03W

  • 厂商:

    INFINEON

  • 封装:

  • 描述:

    BBY58-03W - Silicon Tuning Diodes - Infineon Technologies AG

  • 数据手册
  • 价格&库存
BBY58-03W 数据手册
BBY58... Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs • Very low capacitance spread BBY58-02L/V BBY58-02W BBY58-03W BBY58-05W BBY58-06W BBY58-07L4 3 3 4 3 1 2 D1 D2 D1 D2 D1 D2 1 2 1 2 1 2 Type BBY58-02L* BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W BBY58-07L4* *Preliminary Package TSLP-2-1 SC79 SCD80 SOD323 SOT323 SOT323 TSLP-4-4 Configuration single, leadless single single single common cathode common anode parallel pair, leadless LS(nH) 0.4 0.6 0.6 0.6 1.4 1.4 0.4 Marking 88 8 88 8 yel. B5s B6s B8 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 10 20 -55 ... 150 -55 ... 150 Unit V mA °C 1 Jul-25-2003 BBY58... Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter DC Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 6 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance ratio VR = 4 V, VR = 6 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz, BBY58-02L, -07L4 VR = 1 V, f = 470 MHz, all other rS 0.3 0.25 Ω CT4/CT6 1.15 1.3 1.45 CT1/CT4 2.7 3.05 3.5 CT1/CT3 CT 17.5 11.4 7.8 5.5 3.8 1.9 18.3 12.35 8.6 6 4.7 2.15 19.3 13.3 9.3 6.6 5.5 2.4 pF Symbol min. IR - Values typ. max. Unit nA 10 100 2 Jul-25-2003 BBY58... Diode capacitance CT = ƒ (VR) f = 1MHz 32 pF Normalized diode capacitance C(TA)/C(25°C)= ƒ(TA) f = 1MHz, VR = Parameter 1.05 1V 4V 1.03 CTA/C25 V 24 1.02 1.01 1 0.99 0.98 CT 20 16 12 8 0.97 4 0.96 0.95 -30 °C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 5 -10 10 30 50 70 100 VR TA Temperature coefficient of the diode capacitance TCc = ƒ (VR) 10 -3 TCC 1/°C 10 -4 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VR 3 Jul-25-2003
BBY58-03W 价格&库存

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