BC808-25W

BC807W, BC808W PNP Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC817W, BC818W (NPN) 3




2 1 VSO05561 Type BC807-16W BC807-25W BC807-40W BC808-16W BC808-25W BC808-40W Maximum Ratings Parameter Marking 5As 5Bs 5Cs 5Es 5Fs 5Gs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 Symbol VCEO VCBO VEBO BC 807W 45 50 5 500 1 100 200 250 150 BC 808W 25 30 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg mA A mA mW °C -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS
80 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V h FE-grp. 16 h FE-grp. 25 h FE-grp. 40 DC current gain 1) IC = 500 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VBEsat VCEsat hFE hFE IEBO ICBO ICBO V(BR)CEO Symbol min. Values typ. max. Unit V 45 25 100 50 100 nA µA nA 100 160 250 40 160 250 350 250 400 630 0.7 1.2 V BC807W BC808W V(BR)CBO BC807W BC808W V(BR)EBO 50 30 5 - 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-29-2001 BC807W, BC808W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 10 pF fT 200 MHz Symbol min. Values typ. max. Unit 3 Nov-29-2001 BC807W, BC808W Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 300 10 3 K/W mW 10 2 P tot 200 RthJS 10 1 150 100 10 0 50 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0 0 20 40 60 80 100 120 °C 150 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Collector cutoff current ICBO = f(TA) VCB = 25V 10 5 EHP00213 Ptotmax / PtotDC = f (tp) 10 3 Ptotmax / PtotDC - Ι CBO nA 10 4 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 3 max 10 2 typ 10 1 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 0 50 100 ˚C TA 150 tp 4 Nov-29-2001 BC807W, BC808W DC current gain hFE = f(IC) VCE = 1V 10 3 h FE 5 100 ˚C 25 ˚C -50 ˚C 10 5 2 EHP00216 Transition frequency fT = f (IC) VCE = 5V 10 3 fT MHz 5 EHP00210 10 2 10 1 5 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 10 1 10 0 10 1 10 2 mA 10 3 ΙC ΙC Base-emitter saturation voltage IC = f(VBEsat ), hFE = 10 10 3 EHP00214 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 10 3 EHP00215 ΙC mA 150 ˚C 25 ˚C -50 ˚C ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 1.0 2.0 3.0 V 4.0 10 -1 0 0.2 0.4 0.6 V 0.8 V BEsat V CEsat 5 Nov-29-2001