BC808-40

BC807.../BC808... PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type BC807-16 BC807-16W BC807-25 BC807-25W BC807-40 BC807-40W BC808-25 BC808-25W BC808-40 BC808-40W 1Pb-containing Marking 5As 5As 5Bs 5Bs 5Cs 5Cs 5Fs 5Fs 5Gs 5Gs Pin Configuration 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C - Package SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 package may be available upon special request 1 2007-06-08 BC807.../BC808... Maximum Ratings Parameter Collector-emitter voltage BC807... BC808... Collector-base voltage BC807... BC808... Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS ≤ 79 °C BC807, BC808 TS ≤ 130 °C BC807W, BC808W Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BC807, BC808 BC807W, BC808W 1For Symbol VCEO Value 45 25 Unit V VCBO 50 30 VEBO IC ICM IB IBM Ptot 330 250 Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 215 ≤ 80 Unit K/W °C 5 500 1000 100 200 mW mA calculation of RthJA please refer to Application Note Thermal Resistance 2 2007-06-08 BC807.../BC808... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BC807... IC = 10 mA, IB = 0 , BC808... 45 25 V(BR)CBO - µA Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC807... IC = 10 µA, IE = 0 , BC808... 50 30 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 5 Collector-base cutoff current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 °C I EBO h FE - 0.1 50 100 nA - Emitter-base cutoff current VEB = 4 V, IC = 0 - DC current gain1) IC = 100 mA, V CE = 1 V, h FE-grp. 16 IC = 100 mA, V CE = 1 V, h FE-grp. 25 IC = 100 mA, V CE = 1 V, h FE grp. 40 IC = 500 mA, V CE = 1 V 100 160 250 40 VCEsat VBEsat 160 250 350 - 250 400 630 0.7 1.2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA - Base emitter saturation voltage 1) IC = 500 mA, IB = 50 mA 1Pulse test: t < 300µs; D < 2% 3 2007-06-08 BC807.../BC808... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 8 pF fT 200 MHz Symbol min. Values typ. max. Unit 4 2007-06-08 BC807.../BC808... DC current gain hFE = ƒ(IC) VCE = 1 V h FE-grp. 16 10 3 DC current gain hFE = ƒ(IC) VCE = 1 V h FE-grp. 25 10 3 hFE 10 2 h FE 10 2 105 °C 85 °C 65 °C 25 °C -40 °C 105 °C 85 °C 65 °C 25 °C -40 °C 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 0 A 10 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 0 A 10 IC IC DC current gain hFE = ƒ(IC) VCE = 1 V h FE-grp. 40 10 3 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 3 EHP00215 ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 hFE 5 10 2 105 °C 85 °C 65 °C 25 °C -40 °C 10 1 5 10 0 5 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 A 10 0 10 -1 0 0.2 0.4 0.6 V 0.8 IC V CEsat 5 2007-06-08 BC807.../BC808... Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 10 3 EHP00214 Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V 10 5 EHP00213 ΙC mA 150 ˚C 25 ˚C -50 ˚C Ι CBO nA 10 4 10 5 2 10 3 10 1 5 max 10 2 typ 10 0 5 10 1 10 -1 0 1.0 2.0 3.0 V 4.0 10 0 0 50 100 ˚C TA 150 V BEsat Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 fT MHz 5 EHP00210 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 65 pF 55 CCB/CEB 50 45 40 35 30 10 2 5 25 20 15 10 5 CCB CEB 10 1 10 0 10 1 10 2 mA 10 3 0 0 2 4 6 8 10 12 14 16 V 20 ΙC VCB/VEB 6 2007-06-08 BC807.../BC808... Total power dissipation Ptot = ƒ(TS) BC807, BC808 Total power dissipation Ptot = ƒ(TS) BC807W, BC808W 360 mW 300 mW 300 270 250 225 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Permissible Pulse Load RthJS = ƒ(tp ) BC807, BC808 10 3 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC807, BC808 10 4 - 10 2 Ptotmax /PtotDC 10 3 RthJS 10 1 10 2 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 2007-06-08 BC807.../BC808... Permissible Puls Load RthJS = ƒ (tp) BC807W, BC808W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC807W, BC808W 10 3 10 2 P totmax/P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RtthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 2007-06-08 Package SOT23 BC807.../BC808... Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 9 2007-06-08 Package SOT323 BC807.../BC808... Package Outline 2 ±0.2 0.3 +0.1 -0.05 3 1.25 ±0.1 2.1 ±0.1 0.9 ±0.1 3x 0.1 M 0.1 MAX. 0.1 A 1 0.65 0.65 2 0.1 MIN. 0.15 +0.1 -0.05 0.2 M A Foot Print 0.6 0.8 0.65 0.65 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BCR108W Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 10 2007-06-08 BC807.../BC808... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2007-06-08