BC817-25

BC817, BC818 NPN Silicon AF Transistors 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807, BC808 (PNP)




2 1 VPS05161 Type BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 Maximum Ratings Parameter Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Symbol VCEO VCBO VEBO BC817 45 50 5 500 1 100 200 330 150 BC818 25 30 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg mA A mA mW °C -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS
215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC817, BC818 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V hFE-grp.16 hFE-grp.25 hFE-grp.40 DC current gain 1) IC = 300 mA, VCE = 1 V hFE-grp.16 hFE-grp.25 hFE-grp.40 Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VCEsat VBEsat hFE hFE IEBO ICBO ICBO V(BR)CEO Symbol min. Values typ. max. Unit V 45 25 100 50 100 nA µA nA 100 160 250 160 250 350 250 400 630 BC817 BC818 V(BR)CBO BC817 BC818 V(BR)EBO 50 30 5 - 60 100 170 - - 0.7 1.2 V 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-29-2001 BC817, BC818 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 6 pF fT 170 MHz Symbol min. Values typ. max. Unit 3 Nov-29-2001 BC817, BC818 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V 10 3 fT MHz 5 BC 817/818 EHP00218 360 mW 300 270 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 2 5 °C 150 TS 10 1 10 0 10 1 10 2 mA 10 3 ΙC Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max Ptot DC BC 817/818 EHP00220 Collector cutoff current ICBO = f (T A) VCBO = 25V 10 5 BC 817/818 EHP00221 D= tp T tp T Ι CBO nA 10 4 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 3 max 10 2 typ 10 1 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 0 0 50 100 ˚C TA 150 4 Nov-29-2001 BC817, BC818 Base-emitter saturation voltage IC = f(VBEsat ), hFE = 10 10 3 BC 817/818 EHP00222 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 10 3 BC 817/818 EHP00223 ΙC mA 150 ˚C 25 ˚C -50 ˚C ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 1.0 2.0 3.0 V 4.0 10 -1 0 0.2 0.4 0.6 V 0.8 V BEsat VCEsat DC current gain hFE = f(IC) VCE = 1V 10 3 h FE 5 BC 817/818 EHP00224 100 ˚C 25 ˚C -50 ˚C 10 5 2 10 1 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 ΙC 5 Nov-29-2001