BC817SU_08

BC817SU NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 5 6 1 4 2 3 Type BC817SU Maximum Ratings Parameter Marking B6s 1=E Pin Configuration 2=C 3=C 4=C 5=C 6=B Package SC74 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Symbol RthJS Value 45 50 5 500 1 100 200 1000 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 100°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2) 1Pb-containing 2For mA A mA mW °C Value ≤ 50 Unit K/W package may be available upon special request calculation of R thJA please refer to Application Note Thermal Resistance 1 2008-10-20 BC817SU Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO V(BR)CBO V(BR)EBO I CBO Symbol min. 45 50 5 Values typ. max. - Unit V Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 °C µA 0.1 50 100 nA 160 40 250 400 0.4 1.2 V Emitter-base cutoff current VEB = 4 V, IC = 0 I EBO h FE - DC current gain1) IC = 100 mA, V CE = 1 V IC = 500 mA, V CE = 1 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat VBEsat - Base emitter saturation voltage1) IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance f = 1 MHz, VBE = 10 V Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 1Pulse fT Ccb Ceb - 170 3 40 - MHz pF test: t < 300µs; D < 2% 2 2008-10-20 BC817SU DC current gain hFE = ƒ(IC) VCE = 1 V 10 3 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 0.4 V U ce H fe 10 2 125 °C 85 °C 25 °C - 40 °C 0.2 150 °C 25 °C - 50 °C 0.1 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 A 10 0 0 -4 10 10 -3 10 -2 10 -1 A 10 0 Ic Ic Base-emitter saturation voltage IC = (V BEsat), hFE = 10 1.5 V Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V 10 5 BC 817/818 EHP00221 Ι CBO 1.2 1.1 nA 10 4 Ube 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -4 10 150 °C 25 °C - 50 °C 10 3 max 10 2 typ 10 1 10 -3 10 -2 10 -1 A 10 0 10 0 0 50 100 ˚C TA 150 Ic 3 2008-10-20 BC817SU Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 fT MHz 5 mW BC 817/818 EHP00218 Total power dissipation Ptot = ƒ(TS) 1200 10 2 P tot 800 600 5 400 200 10 1 10 0 10 1 10 2 mA 10 3 0 0 50 °C TS 150 ΙC Permissible Pulse Load RthJS = ƒ(tp ) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 10 3 - 10 2 Ptotmax /PtotDC RthJS 10 2 10 1 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TP TP 4 2008-10-20 Package SC74 BC817SU Package Outline 2.9 ±0.2 (2.25) B (0.35) 2.5 ±0.1 6 5 4 1.1 MAX. 0.15 +0.1 -0.06 0.25 ±0.1 1.6 ±0.1 10˚ MAX. 1 2 3 Pin 1 marking 1.9 0.35 +0.1 -0.05 0.95 10˚ MAX. 0.2 M B 6x 0.2 M A 0.1 MAX. A Foot Print 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.9 2.9 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 Pin 1 marking 3.15 2.7 8 1.15 5 2008-10-20 BC817SU Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2008-10-20