BC817U_07

BC817U NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain • Low collector-saturation voltage • Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 5 6 1 2 3 C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07178 Type BC817U Maximum Ratings Parameter Marking Pin Configuration Package 6Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 45 50 5 500 1000 100 200 330 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS ≤ 115 °C Junction temperature Storage temperature 1Pb-containing mA mW °C package may be available upon special request 1 2007-04-20 BC817U Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 105 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO V(BR)CBO V(BR)EBO I CBO Symbol min. 45 50 5 Values typ. max. - Unit V Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 °C µA 0.1 50 100 nA 160 100 250 400 0.7 1.2 V Emitter-base cutoff current VEB = 4 V, IC = 0 I EBO h FE - DC current gain2) IC = 100 mA, V CE = 1 V IC = 300 mA, V CE = 1 V Collector-emitter saturation voltage2) IC = 500 mA, IB = 50 mA VCEsat VBEsat - Base emitter saturation voltage2) IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance f = 1 MHz, VBE = 10 V Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 1For fT Ccb Ceb - 170 6 60 - MHz pF calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2Pulse 2 2007-04-20 BC817U DC current gain hFE = ƒ(IC) VCE = 1 V 10 3 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 3 BC 817/818 EHP00223 ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 h FE 5 10 2 10 1 105 °C 85 °C 65 °C 25 °C -40 °C 5 10 0 5 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 0 A 10 10 -1 0 0.2 0.4 0.6 V 0.8 IC VCEsat Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 10 3 BC 817/818 EHP00222 Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V 10 5 BC 817/818 EHP00221 ΙC mA 150 ˚C 25 ˚C -50 ˚C Ι CBO nA 10 4 10 5 2 10 3 10 1 5 max 10 2 typ 10 0 5 10 1 10 -1 0 1.0 2.0 3.0 V 4.0 10 0 0 50 100 ˚C TA 150 V BEsat 3 2007-04-20 BC817U Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 fT MHz 5 60 BC 817/818 EHP00218 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 75 pF C CB/C EB 55 50 45 40 35 30 10 2 5 CEB 25 20 15 10 5 CCB 10 1 10 0 10 1 10 2 mA 10 3 0 0 2 4 6 8 10 12 14 16 V 20 ΙC VCB/VEB Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 400 mW 10 3 K/W 300 10 2 250 RthJS 10 1 Ptot 200 150 10 0 100 50 10 -1 -6 10 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 0 0 20 40 60 80 100 120 °C 150 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp 4 2007-04-20 BC817U Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 P totmax/P totDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2007-04-20 Package SC74 BC817U Package Outline 2.9 ±0.2 (2.25) B (0.35) 2.5 ±0.1 6 5 4 1.1 MAX. 0.15 +0.1 -0.06 0.25 ±0.1 1.6 ±0.1 10˚ MAX. 1 2 3 Pin 1 marking 1.9 0.35 +0.1 -0.05 0.95 10˚ MAX. 0.2 M B 6x 0.2 M A 0.1 MAX. A Foot Print 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.9 2.9 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 Pin 1 marking 3.15 2.7 8 1.15 6 2007-04-20 BC817U Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-20