BC817W

BC817W, BC818W NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807W, BC808W (PNP) 3




2 1 VSO05561 Type BC817-16W BC817-25W BC817-40W BC818-16W BC818-25W BC818-40W Maximum Ratings Parameter Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 Symbol VCEO VCBO VEBO BC817W 45 50 5 500 1 100 200 250 150 BC818W 25 30 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg mA A mA mW °C -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS
80 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC817W, BC818W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V h FE-grp.16 h FE-grp.25 h FE-grp.40 DC current gain 1) IC = 300 mA, VCE = 1 V hFE-grp.16 hFE-grp.25 hFE-grp.40 Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VBEsat VCEsat hFE hFE IEBO ICBO ICBO V(BR)CEO Symbol min. Values typ. max. Unit V 45 25 100 50 100 nA µA nA 100 160 250 160 250 350 250 400 630 BC817W BC818W V(BR)CBO BC817W BC818W V(BR)EBO 50 30 5 - 60 100 170 - - 0.7 1.2 V 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-29-2001 BC817W, BC818W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 6 pF fT 170 MHz Symbol min. Values typ. max. Unit 3 Nov-29-2001 BC817W, BC818W Total power dissipation Ptot = f (TS ) Permissible Pulse Load RthJS = f (tp) 300 10 3 K/W mW 10 2 P tot 200 RthJS 10 1 150 100 10 0 50 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 0 0 20 40 60 80 100 120 °C 150 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Collector cutoff current ICBO = f (T A) VCBO = 25V 10 5 BC 817/818 EHP00221 Ptotmax / PtotDC = f (tp) 10 3 Ptotmax / PtotDC - Ι CBO nA 10 4 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 3 max 10 2 typ 10 1 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 0 50 100 ˚C TA 150 tp 4 Nov-29-2001 BC817W, BC818W DC current gain hFE = f (IC ) VCE = 1V 10 3 h FE 5 BC 817/818 EHP00224 Transition frequency fT = f (IC) VCE = 5V 10 3 fT MHz 5 BC 817/818 EHP00218 100 ˚C 25 ˚C -50 ˚C 10 5 2 10 2 10 1 5 5 10 0 10 -1 10 0 10 1 10 2 mA 10 3 10 1 10 0 10 1 10 2 mA 10 3 ΙC ΙC Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 BC 817/818 EHP00222 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 10 3 EHP00215 ΙC mA 150 ˚C 25 ˚C -50 ˚C ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 5 10 2 5 10 1 5 10 1 5 10 0 5 10 0 5 10 -1 0 1.0 2.0 3.0 V 4.0 10 -1 0 0.2 0.4 0.6 V 0.8 V BEsat V CEsat 5 Nov-29-2001