BC818K-40

BC817.../BC818... NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807.../W, BC808.../W (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W BC817K-25W* BC817-40 BC817K-40* BC817-40W BC817K-40W* BC818-16W BC818K-16W* BC818-25 BC818K-25* BC818-40 BC818K-40* * Shrinked chip version 1Pb-containing Marking 6As 6As 6Bs 6Bs 6Bs 6Bs 6Cs 6Cs 6Cs 6Cs 6Es 6Es 6Fs 6Fs 6Gs 6Gs Pin Configuration 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C - Package SOT23 SOT23 SOT23 SOT23 SOT323 SOT323 SOT23 SOT23 SOT323 SOT323 SOT323 SOT323 SOT23 SOT23 SOT23 SOT23 package may be available upon special request 1 2008-04-11 BC817.../BC818... Maximum Ratings Parameter Collector-emitter voltage BC817... BC818... Collector-base voltage BC817... BC818... Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipationTS ≤ 79 °C, BC817, BC818 TS ≤ 115 °C, BC817K, BC818K TS ≤ 130 °C, BC817W/KW, BC818...W/KW Junction temperature Storage temperature Tj Tstg VEBO IC ICM IB IBM Ptot 330 500 250 150 -65 ... 150 °C VCBO 50 30 5 500 1000 100 200 mW mA Symbol VCEO 45 25 Value Unit V Thermal Resistance Parameter Junction - soldering point 1) BC817, BC818 BC817K, BC818K BC817W/KW, BC818W/KW 1For Symbol RthJS Value ≤ 215 ≤ 70 ≤ 80 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2008-04-11 BC817.../BC818... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BC817... IC = 10 mA, IB = 0 , BC818... 45 25 V(BR)CBO - V µA Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC817... IC = 10 µA, IE = 0 , BC818... 50 30 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 5 Collector-base cutoff current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 °C I EBO h FE - 0.1 50 100 nA - Emitter-base cutoff current VEB = 4 V, IC = 0 - DC current gain1) IC = 100 mA, V CE = 1 V, h FE-grp.16 IC = 100 mA, V CE = 1 V, h FE-grp.25 IC = 100 mA, V CE = 1 V, h FE-grp.40 IC = 300 mA, V CE = 1 V, h FE-grp.162) IC = 300 mA, V CE = 1 V, h FE-grp.252) IC = 300 mA, V CE = 1 V, h FE-grp.402) IC = 500 mA, V CE = 1 V, all hFE-grps.3) 100 160 250 60 100 170 40 VCEsat VBEsat 160 250 350 - 250 400 630 0.7 1.2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base emitter saturation voltage 1) IC = 500 mA, IB = 50 mA 1Pulse 2For - test: t < 300µs; D < 2% all BC817 and BC818 subtypes 3For all BC817K and BC818K subtypes 3 2008-04-11 BC817.../BC818... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT Ccb Symbol min. - Values typ. 170 max. - Unit MHz pF Collector-base capacitance VCB = 10 V, f = 1 MHz1) VCB = 10 V, f = 1 MHz2) Ceb 6 3 60 40 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz1) VEB = 0.5 V, f = 1 MHz2) 1For 2For - all BC817 and BC818 subtypes all BC817K and BC818K subtypes 4 2008-04-11 BC817.../BC818... DC current gain hFE = ƒ(IC) VCE = 1 V h FE-grp.16 10 3 DC current gain hFE = ƒ(IC) VCE = 1 V h FE-grp.25 10 3 h FE 10 2 h FE 10 2 105 °C 85 °C 65 °C 25 °C -40 °C 10 1 -5 10 10 -4 105 °C 85 °C 65 °C 25 °C -40 °C 10 -3 10 -2 10 -1 0 A 10 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 0 A 10 IC IC DC current gain hFE = ƒ(IC) VCE = 1 V h FE-grp.40 10 3 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 3 BC 817/818 EHP00223 ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 hFE 5 10 2 10 1 105 °C 85 °C 65 °C 25 °C -40 °C 5 10 0 5 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 0 A 10 10 -1 0 0.2 0.4 0.6 V 0.8 IC VCEsat 5 2008-04-11 BC817.../BC818... Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 10 3 BC 817/818 EHP00222 Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V 10 5 BC 817/818 EHP00221 ΙC mA 150 ˚C 25 ˚C -50 ˚C Ι CBO nA 10 4 10 2 5 10 3 10 1 5 max 10 2 typ 10 0 5 10 1 10 -1 0 1.0 2.0 3.0 V 4.0 10 0 0 50 100 ˚C TA 150 V BEsat Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 fT MHz 5 BC 817/818 EHP00218 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) BC817, BC818: - - - , BC817K, BC818K: ___ 75 pF 60 CCB/CEB 55 50 45 40 35 30 CEB: BC817/BC818 CEB: BC817K/BC818K CCB: BC817/BC818 CCB: BC817K/BC818K 10 2 5 25 20 15 10 5 10 1 10 0 10 1 10 2 mA 10 3 0 0 2 4 6 8 10 12 14 16 V 20 ΙC VCB/V EB 6 2008-04-11 BC817.../BC818... Total power dissipation Ptot = ƒ(TS) BC817, BC818: - - - , BC817K, BC818K: ___ Total power dissipation Ptot = ƒ(TS) BC817W/KW, BC818W/KW 550 mW 550 mW 450 400 BC817K, BC818K BC817, BC818 450 400 P tot 350 300 250 200 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 350 300 250 200 150 100 50 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Permissible Pulse Load RthJS = ƒ(tp ) BC817, BC818 10 3 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC817, BC818 10 4 - 10 2 Ptotmax /PtotDC 10 3 RthJS 10 1 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 2008-04-11 BC817.../BC818... Permissible Pulse Load RthJS = ƒ(tp ) BC817/K, BC818/K 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC817K, BC818K 10 3 10 1 P totmax/P totDC - RthJS 10 2 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TP TP Permissible Puls Load RthJS = ƒ (tp) BC817W/KW, BC818W/KW 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC817W/KW, BC818W/KW 10 3 10 2 Ptotmax /PtotDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 2008-04-11 Package SOT23 BC817.../BC818... Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 9 2008-04-11 Package SOT323 BC817.../BC818... Package Outline 2 ±0.2 0.3 +0.1 -0.05 3 1.25 ±0.1 2.1 ±0.1 0.9 ±0.1 3x 0.1 M 0.1 MAX. 0.1 A 1 0.65 0.65 2 0.1 MIN. 0.15 +0.1 -0.05 0.2 M A Foot Print 0.6 0.8 0.65 0.65 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BCR108W Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 10 2008-04-11 BC817.../BC818... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2008-04-11