BC856S/U_BC857S
PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see package information below • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
BC856S/U BC857S
C1 6 B2 5 E2 4
TR2 TR1
1 E1
2 B1
3 C2
EHA07175
Type BC856S BC856U BC857S
1Pb-containing
Marking 3Ds 3Ds 3Cs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
package may be available upon special request
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BC856S/U_BC857S
Maximum Ratings Parameter Collector-emitter voltage BC856S/U BC857S Collector-base voltage BC856S, BC856U BC857S Emitter-base voltage Collector current Peak collector current Total power dissipationTS ≤ 115 °C, BC856S TS ≤ 118 °C, BC856U, BC857U Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BC856S, BC857S BC856U
1For
Symbol VCEO
Value 65 45
Unit -
VCBO 80 50 VEBO IC ICM Ptot 250 250 Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 140 ≤ 130 5 100 200
V
mA -
°C
Unit K/W
calculation of RthJA please refer to Application Note Thermal Resistance
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BC856S/U_BC857S
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC856S/U IC = 10 mA, IB = 0 , BC857S
65 45
V(BR)CBO
-
V µA
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC856S/U IC = 10 µA, IE = 0 , BC857S
80 50
V(BR)EBO I CBO
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
5
Collector-base cutoff current
VCB = 45 V, IE = 0 VCB = 45 V, IE = 0 , TA = 150 °C
h FE
250 290 75 250 700 850 650 -
0.015 5 630 mV 300 650 mV 750 820
DC current gain1)
IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V
200
VCEsat
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
VBEsat
Base emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA
VBE(ON)
Base-emitter voltage1)
IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
1Pulse
600 -
test: t < 300µs; D < 2%
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BC856S/U_BC857S
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ F 10 dB h22e 30 µS h21e 330 h12e 2 10-4 h11e 4.5 kΩ Ceb 8 Ccb 1.5 pF fT 250 MHz Symbol min. Values typ. max. Unit
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BC856S/U_BC857S
DC current gain hFE = ƒ(IC) VCE = 5 V
10 3
EHP00382
Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 20
10 2
EHP00380
h FE
5
100 C 25 C
ΙC
mA 100 C 25 C -50 C
10 2 5
-50 C
10 1 5
10 1 5
10 5
0
10 0 10 -2
5
10 -1
5 10
0
5 10
1
mA 10 ΙC
2
10 -1
0
0.1
0.2
0.3
0.4
V 0.5 VCEsat
Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 20
10 2 mA
EHP00379
Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V
10 4 nA
EHP00381
ΙC
100 C 25 C -50 C
Ι CB0
10 3 5 10 2 5 10 1 5 10 5
0
10 5
1
max
typ
10 0 5
10 -1
10 -1
0
0.2
0.4
0.6
0.8
V 1.2 V BEsat
0
50
100
C TA
150
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BC856S/U_BC857S
Transition frequency fT = ƒ(IC) VCE = 5 V
10 3 MHz
EHP00378
Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB)
12
pF
fT
5
CCB(C EB)
10 9 8 7 6 5
10
2
5
4 3 2 1
CEB
CCB
10 1 10 -1
5 10 0
5
10 1
mA
10 2
0 0
4
8
12
16
V
22
ΙC
VCB(VEB)
Total power dissipation Ptot = ƒ(TS) BC856S, BC857S
300
mW
Total power dissipation Ptot = ƒ(TS) BC856U
300
mW
250 225
250 225
Ptot
175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150
Ptot
200
200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150
TS
TS
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BC856S/U_BC857S
Permissible Pulse Load RthJS = ƒ(tp ) BC856S; BC857S
10 3
K/W
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC856S, BC857S
10 3
10 2
P totmax/P totDC
-
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Permissible Puls Load RthJS = ƒ (tp) BC856U
10 3
K/W
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC856U
10 3
Ptotmax / PtotDC
10
2
10 2
10 1
10 0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
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Package SC74
BC856S/U_BC857S
Package Outline
2.9 ±0.2 (2.25) B (0.35)
2.5 ±0.1
6 5 4
1.1 MAX. 0.15 +0.1 -0.06
0.25 ±0.1 1.6 ±0.1
10˚ MAX.
1
2
3
Pin 1 marking 1.9
0.35 +0.1 -0.05 0.95
10˚ MAX.
0.2
M
B 6x 0.2
M
A
0.1 MAX. A
Foot Print
0.5
0.95
Marking Layout (Example)
Small variations in positioning of Date code, Type code and Manufacture are possible.
1.9
2.9
Manufacturer
2005, June Date code (Year/Month)
Pin 1 marking Laser marking
BCW66H Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel.
4
0.2
Pin 1 marking
3.15
2.7 8
1.15
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Package SOT363
BC856S/U_BC857S
Package Outline
2 ±0.2 0.2 -0.05
+0.1
0.9 ±0.1 6x 0.1 4
1.25 ±0.1 2.1 ±0.1
M
0.1 MAX. 0.1 A
6
5
Pin 1 marking
1
2
3
0.1 MIN.
0.65 0.65 0.2
M
0.15 +0.1 -0.05 A
Foot Print
0.3
0.9 0.7
0.65 0.65
Marking Layout (Example)
Small variations in positioning of Date code, Type code and Manufacture are possible.
1.6
Manufacturer
2005, June Date code (Year/Month)
Pin 1 marking Laser marking
BCR108S Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel.
4
0.2
2.3 8
Pin 1 marking
2.15
1.1
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BC856S/U_BC857S
Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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