BC856S

BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see package information below • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BC856S/U BC857S C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07175 Type BC856S BC856U BC857S 1Pb-containing Marking 3Ds 3Ds 3Cs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 package may be available upon special request 1 2008-01-18 BC856S/U_BC857S Maximum Ratings Parameter Collector-emitter voltage BC856S/U BC857S Collector-base voltage BC856S, BC856U BC857S Emitter-base voltage Collector current Peak collector current Total power dissipationTS ≤ 115 °C, BC856S TS ≤ 118 °C, BC856U, BC857U Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BC856S, BC857S BC856U 1For Symbol VCEO Value 65 45 Unit - VCBO 80 50 VEBO IC ICM Ptot 250 250 Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 140 ≤ 130 5 100 200 V mA - °C Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2008-01-18 BC856S/U_BC857S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BC856S/U IC = 10 mA, IB = 0 , BC857S 65 45 V(BR)CBO - V µA Collector-base breakdown voltage IC = 10 µA, IE = 0 , BC856S/U IC = 10 µA, IE = 0 , BC857S 80 50 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 5 Collector-base cutoff current VCB = 45 V, IE = 0 VCB = 45 V, IE = 0 , TA = 150 °C h FE 250 290 75 250 700 850 650 - 0.015 5 630 mV 300 650 mV 750 820 DC current gain1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V 200 VCEsat Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat Base emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBE(ON) Base-emitter voltage1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1Pulse 600 - test: t < 300µs; D < 2% 3 2008-01-18 BC856S/U_BC857S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ F 10 dB h22e 30 µS h21e 330 h12e 2 10-4 h11e 4.5 kΩ Ceb 8 Ccb 1.5 pF fT 250 MHz Symbol min. Values typ. max. Unit 4 2008-01-18 BC856S/U_BC857S DC current gain hFE = ƒ(IC) VCE = 5 V 10 3 EHP00382 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 20 10 2 EHP00380 h FE 5 100 C 25 C ΙC mA 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 5 0 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 ΙC 2 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 20 10 2 mA EHP00379 Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V 10 4 nA EHP00381 ΙC 100 C 25 C -50 C Ι CB0 10 3 5 10 2 5 10 1 5 10 5 0 10 5 1 max typ 10 0 5 10 -1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 0 50 100 C TA 150 5 2008-01-18 BC856S/U_BC857S Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 MHz EHP00378 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 12 pF fT 5 CCB(C EB) 10 9 8 7 6 5 10 2 5 4 3 2 1 CEB CCB 10 1 10 -1 5 10 0 5 10 1 mA 10 2 0 0 4 8 12 16 V 22 ΙC VCB(VEB) Total power dissipation Ptot = ƒ(TS) BC856S, BC857S 300 mW Total power dissipation Ptot = ƒ(TS) BC856U 300 mW 250 225 250 225 Ptot 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 Ptot 200 200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS 6 2008-01-18 BC856S/U_BC857S Permissible Pulse Load RthJS = ƒ(tp ) BC856S; BC857S 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC856S, BC857S 10 3 10 2 P totmax/P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BC856U 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BC856U 10 3 Ptotmax / PtotDC 10 2 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 2008-01-18 Package SC74 BC856S/U_BC857S Package Outline 2.9 ±0.2 (2.25) B (0.35) 2.5 ±0.1 6 5 4 1.1 MAX. 0.15 +0.1 -0.06 0.25 ±0.1 1.6 ±0.1 10˚ MAX. 1 2 3 Pin 1 marking 1.9 0.35 +0.1 -0.05 0.95 10˚ MAX. 0.2 M B 6x 0.2 M A 0.1 MAX. A Foot Print 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.9 2.9 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 Pin 1 marking 3.15 2.7 8 1.15 8 2008-01-18 Package SOT363 BC856S/U_BC857S Package Outline 2 ±0.2 0.2 -0.05 +0.1 0.9 ±0.1 6x 0.1 4 1.25 ±0.1 2.1 ±0.1 M 0.1 MAX. 0.1 A 6 5 Pin 1 marking 1 2 3 0.1 MIN. 0.65 0.65 0.2 M 0.15 +0.1 -0.05 A Foot Print 0.3 0.9 0.7 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.6 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 2.3 8 Pin 1 marking 2.15 1.1 9 2008-01-18 BC856S/U_BC857S Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 2008-01-18