BC857T
PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC847...T
3
2 1
VPS05996
Type BC857AT BC857BT
Maximum Ratings Parameter
Marking 3Es 3Fs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SC75 SC75
Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg
Value 45 50 50 5 100 200 250 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 109 °C Junction temperature Storage temperature
mA mW °C
Thermal Resistance Junction - soldering point 1) RthJS
165
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC857T
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain IC = 10 µA, VCE = 5 V DC current gain IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) VBEsat
BC857AT BC857BT BC857AT BC857BT
Symbol min. V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO hFE
Values typ. max.
Unit
45 50 50 5 -
-
15 5
V
nA µA -
hFE
140 250 180 290 75 250 700 850 650 -
250 475 mV 300 650 750 820
125 220
VCEsat
600 -
1) Pulse test: t < 300 s; D < 2%
2
Nov-29-2001
BC857T
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz
BC857AT BC857BT BC857AT BC857BT BC857AT BC857BT
Unit max. k MHz pF
typ. 250 2.5 11
fT Ccb Ceb h11e
-
h12e h21e h22e -
2.7 4.5 1.5 2 200 330 18 30
-
10-4 S -
BC857AT BC857BT
3
Nov-29-2001
Short-circuit input impedance
BC857T
Total power dissipation Ptot = f (TS )
300
mW
Ptot
200
150
100
50
0 0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 3
K/W
10 3
10 2
Ptotmax / PtotDC
RthJS
10 2
10 1
10 0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Nov-29-2001
BC857T
Transition frequency fT = f (IC) VCE = 5V
10 3 MHz
EHP00378
Collector-base capacitance Ccb = f (VCB) Emitter-base capacitance Ceb = f (V EB)
14
fT
5
Ccb, C eb
pF
10
Ceb
8
10
2
6
Ccb
5
4
2
10 1 10 -1
5 10 0
5
10 1
mA ΙC
10 2
0 -1 10
10
0
V
10
1
VCB,VEB
Collector cutoff current ICBO = f (TA) VCB = 30V
10 4 nA
EHP00381
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20
10 2
EHP00380
Ι CB0
10 3 5 10 2 5 10 1 5 10 5 10 -1
0
ΙC
mA 100 C 25 C -50 C
max
10 1 5
typ
10 5
0
0
50
100
C TA
150
10 -1
0
0.1
0.2
0.3
0.4
V 0.5 VCEsat
5
Nov-29-2001
BC857T
DC current gain hFE = f (IC ) VCE = 5V
10 3
EHP00382
Base-emitter saturation voltage IC = f (VBEsat), hFE = 20
10 2 mA
EHP00379
h FE 5
100 C 25 C
ΙC
100 C 25 C -50 C
10 2 5
-50 C
10 1 5
10 1 5
10 0 5
10 0 10 -2
5 10 -1
5 10 0
5 10 1
mA 10 2
10 -1
0
0.2
0.4
0.6
0.8
ΙC
V 1.2 V BEsat
6
Nov-29-2001
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