BC857T

BC857T PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC847...T 3 



2 1 VPS05996 Type BC857AT BC857BT Maximum Ratings Parameter Marking 3Es 3Fs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SC75 SC75 Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Value 45 50 50 5 100 200 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 109 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 1) RthJS
165 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC857T Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain IC = 10 µA, VCE = 5 V DC current gain IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) VBEsat BC857AT BC857BT BC857AT BC857BT Symbol min. V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO ICBO hFE Values typ. max. Unit 45 50 50 5 - - 15 5 V nA µA - hFE 140 250 180 290 75 250 700 850 650 - 250 475 mV 300 650 750 820 125 220 VCEsat 600 - 1) Pulse test: t < 300 s; D < 2%
2 Nov-29-2001 BC857T Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC857AT BC857BT BC857AT BC857BT BC857AT BC857BT Unit max. k MHz pF typ. 250 2.5 11 fT Ccb Ceb h11e - h12e h21e h22e - 2.7 4.5 1.5 2 200 330 18 30 - 10-4 S - BC857AT BC857BT 3 Nov-29-2001
Short-circuit input impedance  BC857T Total power dissipation Ptot = f (TS ) 300 mW Ptot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 10 2 Ptotmax / PtotDC RthJS 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Nov-29-2001 BC857T Transition frequency fT = f (IC) VCE = 5V 10 3 MHz EHP00378 Collector-base capacitance Ccb = f (VCB) Emitter-base capacitance Ceb = f (V EB) 14 fT 5 Ccb, C eb pF 10 Ceb 8 10 2 6 Ccb 5 4 2 10 1 10 -1 5 10 0 5 10 1 mA ΙC 10 2 0 -1 10 10 0 V 10 1 VCB,VEB Collector cutoff current ICBO = f (TA) VCB = 30V 10 4 nA EHP00381 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20 10 2 EHP00380 Ι CB0 10 3 5 10 2 5 10 1 5 10 5 10 -1 0 ΙC mA 100 C 25 C -50 C max 10 1 5 typ 10 5 0 0 50 100 C TA 150 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat 5 Nov-29-2001 BC857T DC current gain hFE = f (IC ) VCE = 5V 10 3 EHP00382 Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 10 2 mA EHP00379 h FE 5 100 C 25 C ΙC 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 0 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 10 -1 0 0.2 0.4 0.6 0.8 ΙC V 1.2 V BEsat 6 Nov-29-2001