BC858BF

BC857BF...BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF (NPN) Type Marking Pin Configuration Package 3 1 2 BC857BF BC858BF BC859BF BC860BF Maximum Ratings Parameter Collector-emitter voltage BC857BF, BC860BF BC858BF, BC859BF Collector-emitter voltage BC857BF, BC860BF BC858BF, BC859BF Collector-base voltage BC857BF, BC860BF BC858BF, BC859BF Emitter-base voltage BC857BF, BC860BF BC858BF, BC859BF Collector current Peak collector current Peak base current Peak emitter current 3Fs 3Ks 4Bs 4Fs 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C TSFP-3 TSFP-3 TSFP-3 TSFP-3 Symbol VCEO Value 45 30 Unit V VCES 50 30 VCBO 50 30 VEBO 5 5 IC ICM IBM IEM Ptot Tj Tstg 1 100 200 200 200 250 150 -65 ... 150 mA mA mW °C Total power dissipation, TS ≤ 128°C Junction temperature Storage temperature Jun-16-2004 BC857BF...BC860BF Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 90 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 mA, BC857BF, BC860BF IC = 10 mA, IB = 0 mA, BC858BF, BC859BF 45 30 V(BR)CBO - µA Collector-base breakdown voltage IC = 10 µA, IE = 0 mA, BC857BF, BC860BF IC = 10 µA, IE = 0 mA, BC858BF, BC859BF 50 30 V(BR)CES Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 V, BC857BF, BC860BF IC = 10 µA, VBE = 0 V, BC858BF, BC859BF 50 30 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 1 µA, IC = 0 µA 5 Collector-base cutoff current VCB = 30 V, IE = 0 A VCB = 30 V, IE = 0 A, TA = 150 °C h FE 250 290 75 250 700 850 650 - 0.015 5 475 mV 300 650 750 820 DC current gain2) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V 220 VCEsat Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat Base emitter saturation voltage 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBE(ON) Base-emitter voltage2) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 2Pulse test: t < 300µs; D < 2% 600 - 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Jun-16-2004 BC857BF...BC860BF AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ, BC859BF IC = 200 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ, BC860BF Equivalent noise voltage IC = 200 µA, V CE = 5 V, RS = 2 kΩ, f = 10...50 Hz , BF860BF Vn 1 4 0.11 µV 1 4 F dB h22e 30 µS h21e 330 h12e 2 10-4 h11e 4.5 kΩ Ceb 10 Ccb 3 pF fT 250 MHz 3 Jun-16-2004 BC857BF...BC860BF DC current gain hFE = ƒ(IC) VCE = 5 V 10 3 EHP00382 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 20 10 2 EHP00380 h FE 5 100 C 25 C ΙC mA 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 5 0 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 ΙC 2 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 20 10 2 mA EHP00379 Collector cutoff current ICBO = ƒ(TA) VCB = 30 V 10 4 nA EHP00381 ΙC 100 C 25 C -50 C Ι CB0 10 3 5 10 2 5 10 1 5 10 5 0 10 5 1 max typ 10 0 5 10 -1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 0 50 100 C TA 150 4 Jun-16-2004 BC857BF...BC860BF Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 MHz EHP00378 Collector-base capacitance CCB= ƒ (VCB0) Emitter-base capacitance CEB= ƒ (VEB0) BC 856...860 EHP00376 fT 5 C CB0 ( C EB0 ) 12 pF 10 8 C EBO 10 2 6 5 4 C CBO 2 10 1 10 -1 5 10 0 5 10 1 mA 10 2 0 10 -1 5 10 0 V VCB0 ΙC 10 1 (VEB0 ) Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 300 10 2 mW K/W Ptot 200 10 1 150 100 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 50 RthJS 0 0 20 40 60 80 100 120 °C 150 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp 5 Jun-16-2004 BC857BF...BC860BF Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 h parameter he = ƒ(IC) normalized VCE = 5V 10 2 he 5 BC 856...860 EHP00383 P totmax/P totDC 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 5 h 11e VCE = 5 V h 12e 10 0 5 h 21e h 22e 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 10 -1 5 10 0 mA 10 1 tp ΙC h parameter he = ƒ(VCE ) normalized IC = 2mA BC 856...860 EHP00384 Noise figure F = ƒ(VCE) IC = 0.2mA, R S = 2kΩ , f = 1kHz 20 dB BC 856...860 EHP00385 2.0 he 1.5 Ι C = 2 mA F h 11 15 1.0 h12 10 0.5 h 22 5 0 0 10 20 V VCE 30 0 10 -1 5 10 0 5 10 1 V VCE 10 2 6 Jun-16-2004 BC857BF...BC860BF Noise figure F = ƒ(f) IC = 0.2mA, VCE = 5V, RS = 2 kΩ BC 856...860 EHP00386 Noise figure F = ƒ(I C) VCE = 5V, f = 120Hz BC 856...860 EHP00387 20 dB 20 dB F 15 F 15 R S = 1 MΩ 100 kΩ 10 k Ω 10 10 500 Ω 5 5 1 kΩ 0 10 -2 10 -1 10 0 10 1 kHz 10 2 f 0 10 -3 10 -2 10 -1 10 0 mA 10 1 ΙC Noise figure F = ƒ(IC ) VCE = 5V, f = 1kHz 20 dB BC 856...860 EHP00388 Noise figure F = ƒ(I C) VCE = 5V, f = 10kHz 20 dB BC 856...860 EHP00389 F 15 R S = 1 MΩ 10 100 k Ω 10 kΩ F 15 R S = 1 MΩ 100 k Ω 10 500 Ω 10 kΩ 1 kΩ 5 500 Ω 5 1 kΩ 0 10 -3 10 -2 10 -1 10 0 mA 10 1 0 10-3 10 -2 10 -1 10 0 mA 10 1 ΙC ΙC 7 Jun-16-2004 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2004. 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