BCM856S

BCM856S PNP Silicon AF Transistor Array • Precision matched transistor pair: ∆I C ≤ 10% • For current mirror applications • Low collector-emitter saturation voltage • Two (galvanic) internal isolated Transistors • Complementary type: BCM846S • BC856S: For orientation in reel see package information below • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 5 6 1 2 3 C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07175 Type BCM856S Maximum Ratings Parameter Marking Pin Configuration Package 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCES VCBO VEBO IC ICM Ptot Tj Tstg Value 65 80 80 5 100 200 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipationTS = 115 °C Junction temperature Storage temperature 1Pb-containing mA mW °C package may be available upon special request 1 2007-04-27 BCM856S Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value 140 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 A Collector-base breakdown voltage IC = 10 µA, IE = 0 A Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 A Emitter-base breakdown voltage IE = 10 µA, I C = 0 A Collector-base cutoff current VCB = 30 V, IE = 0 A VCB = 30 V, IE = 0 A, TA = 150 °C DC current gain-2) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base emitter saturation voltage 2) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage-2) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V Matching IB = 1 µA, VCE1 = V CE2 = 1.0V IB = 100 µA, VCE1 = VCE2 = 1.0V 1For 2Puls Symbol min. V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO I CBO hFE 200 VCEsat VBEsat VBE(ON) 600 ∆I C -10 -10 65 80 80 5 Values typ. max. - Unit V µA 250 290 90 250 700 850 650 0.015 5 450 mV 300 650 750 820 % 10 10 calculation of R thJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2 2007-04-27 BCM856S Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ F 10 dB h22e 30 µS h21e 330 h12e 2 10-4 h11e 4.5 kΩ Ceb 8 Ccb 3 pF fT 250 MHz Symbol min. Values typ. max. Unit 3 2007-04-27 BCM856S DC current gain hFE = ƒ(IC) VCE = 5V 10 3 EHP00382 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 20 10 2 EHP00380 h FE 5 100 C 25 C ΙC mA 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 5 0 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 ΙC 2 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 20 10 2 mA EHP00379 Output characteristics IC = ƒ(VCE), IB = parameter 15 mA ΙC 100 C 25 C -50 C IC 12 11 10 9 8 7 6 IB = 40µA IB = 36µA IB =32µA IB = 28µA IB = 24µA IB = 20µA IB = 16µA IB = 12µA IB = 8µA IB = 4µA 10 5 1 10 0 5 5 4 3 2 1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 0 0 1 2 3 V VCE 5 4 2007-04-27 BCM856S Collector current I C = ƒ(VBE) VCE = Parameter 10 -1 A 5V 5V 5V Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V 10 4 nA EHP00381 10 -2 1V 1V 1V Ι CB0 10 3 5 TA=100°C IC 10 -3 TA=25°C 10 2 5 max 10 -4 TA=-50°C 10 1 5 10 5 0 typ 10 -5 10 -6 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V VBE 1 10 -1 0 50 100 C TA 150 Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 MHz EHP00378 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) 12 pF fT 5 CCB(CEB ) 10 9 8 7 10 2 6 5 CEB 5 4 3 2 1 CCB 10 1 10 -1 5 10 0 5 10 1 mA 10 2 0 0 4 8 12 16 V 22 ΙC VCB(VEB) 5 2007-04-27 BCM856S Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 300 mW 10 3 K/W 250 225 10 2 P tot 200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 R thJS 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 Ptotmax /PtotDC - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 2007-04-27 BCM856S Definition of matching ∆I C = (IC2-IC1)/IC1 $ # " 6 6  ! 1> 1?  1? 8?A 8?A 7 2007-04-27 Package SOT363 BCM856S Package Outline 2 ±0.2 0.2 -0.05 +0.1 0.9 ±0.1 6x 0.1 4 1.25 ±0.1 2.1 ±0.1 M 0.1 MAX. 0.1 A 6 5 Pin 1 marking 1 2 3 0.1 MIN. 0.65 0.65 0.2 M 0.15 +0.1 -0.05 A Foot Print 0.3 0.9 0.7 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.6 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 2.3 8 Pin 1 marking 2.15 1.1 8 2007-04-27 BCM856S Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2007-04-27