BCP29

BCP29, BCP49 NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCP28/48 (PNP) 4 Type BCP29 BCP49 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature



3 2 C(2,4) B(1) 1 VPS05163 E(3) EHA00009 Marking BCP 29 BCP 49 1=B 1=B Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C Package SOT223 SOT223 Symbol VCEO VCBO VEBO BCP29 30 40 10 BCP49 60 80 10 Unit V IC ICM IB IBM Ptot Tj Tstg 500 800 100 200 1.5 150 -65 ... 150 mA mA W °C Thermal Resistance Junction - soldering point1) RthJS
17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCP29, BCP49 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 1 V DC current gain 1) IC = 10 mA, VCE = 5 V DC current gain 1) IC = 100 mA, VCE = 5 V DC current gain 1) IC = 500 mA, VCE = 5 V BCP29 BCP49 1) Pulse test: t ≤ 300µs, D = 2% Unit max. V typ. V(BR)CEO BCP29 BCP49 V(BR)CBO BCP29 BCP49 V(BR)EBO ICBO BCP29 BCP49 ICBO BCP29 BCP49 IEBO hFE BCP29 BCP49 hFE BCP29 BCP49 hFE BCP29 BCP49 hFE 4000 2000 20000 10000 10000 4000 4000 2000 10 10 100 100 100 40 80 10 30 60 - nA µA nA - 2 Nov-29-2001 BCP29, BCP49 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 6.5 fT 200 VBEsat 1.5 VCEsat 1 typ. max. Unit V MHz pF 1) Pulse test: t ≤ 300µs, D = 2% 3 Nov-29-2001 BCP29, BCP49 Total power dissipation Ptot = f(TS) Collector cutoff current ICBO = f (T A) VCB = V CEmax 10 4 BCP 29/49 EHP00251 1650 mW Ι CBO 1350 1200 nA max 10 3 P tot 1050 900 750 600 450 300 150 0 0 10 2 typ 10 1 10 0 15 30 45 60 75 90 105 120 °C 150 TS 0 50 100 ˚C TA 150 Transition frequency fT = f (IC) VCE = 5V 10 3 fT BCP 29/49 EHP00252 Permissible pulse load Ptotmax / PtotDC = f (tp) 10 3 Ptot max 5 Ptot DC BCP 29/49 EHP00253 MHz D= tp T tp T 10 2 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 1 10 2 mA 10 3 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 ΙC 4 Nov-29-2001 BCP29, BCP49 DC current gain hFE = f (IC ) VCE = 5V 10 6 h FE 5 BCP 29/49 EHP00255 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 1000 10 3 BCP 29/49 EHP00256 ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 5 5 125 ˚C 25 ˚C 10 2 5 -55 ˚C 10 4 5 10 1 5 10 3 10 -1 10 0 10 1 10 2 mA 10 3 10 0 0 0.5 1.0 V V CEsat 1.5 ΙC Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO ) BCP 29/49 EHP00257 Base-emitter saturation voltage IC = f (VBEsat), hFE = 1000 BCP 29/49 EHP00258 10 CEB0 (CCB0 ) 10 3 pF ΙC mA 150 ˚C 25 ˚C -50 ˚C 10 2 CCB0 5 CEB0 5 10 1 5 0 10 -1 10 0 V 10 1 V EB0 (V CB0 ) 10 0 0 1.0 2.0 V V BEsat 3.0 5 Nov-29-2001