BCP51_08

BCP51...-BCP53... PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 ... BCP56 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 2 1 3 Type BCP51 BCP51-16 BCP52-16 BCP53-10 BCP53-16 Marking * * * * * 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E Package SOT223 SOT223 SOT223 SOT223 SOT223 * Marking is the same as type-name 1Pb-containing package may be available upon special request 1 2008-10-10 BCP51...-BCP53... Maximum Ratings Parameter Collector-emitter voltage BCP51 BCP52 BCP53 Collector-base voltage BCP51 BCP52 BCP53 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 120°C Junction temperature Storage temperature Tj Tstg 150 -65 ... 150 °C VEBO IC ICM IB IBM Ptot VCBO 45 60 100 5 1 1.5 100 200 2 W mA A Symbol VCEO 45 60 80 Value Unit V Thermal Resistance Parameter Junction - soldering point 1) 1For Symbol RthJS Value ≤ 15 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2008-10-10 BCP51...-BCP53... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BCP51 IC = 10 mA, IB = 0 , BCP52 IC = 10 mA, IB = 0 , BCP53 45 60 80 V(BR)CBO - µA Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCP51 IC = 100 µA, IE = 0 , BCP52 IC = 100 µA, IE = 0 , BCP53 45 60 100 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 5 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 °C h FE 100 160 - 0.1 20 250 160 250 0.5 1 V DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, V CE = 2 V, BCP51 IC = 150 mA, V CE = 2 V, BCP53-10 IC = 150 mA, V CE = 2 V, BCP51-16...BCP53-16 IC = 500 mA, V CE = 2 V 25 40 63 100 25 VCEsat VBE(ON) Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA - Base-emitter voltage1) IC = 500 mA, V CE = 2 V AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz 1Pulse fT - 125 - MHz test: t < 300µs; D < 2% 3 2008-10-10 BCP51...-BCP53... DC current gain hFE = ƒ(IC) VCE = 2 V 10 3 h FE 5 BCP 51...53 EHP00261 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 4 BCP 51...53 EHP00264 ΙC 100 C 25 C -50 C mA 10 3 5 100 C 25 C -50 C 10 2 5 10 2 5 10 5 1 10 1 5 10 0 0 10 10 1 10 2 10 3 mA 10 4 10 0 0 0.2 0.4 0.6 V V CEsat 0.8 ΙC Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 BCP 51...53 EHP00263 Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V 10 4 BCP 51...53 EHP00262 10 4 ΙC mA 10 3 Ι CBO nA 10 3 max 10 2 100 C 25 C -50 C 10 2 10 1 10 1 typ 10 0 10 0 0 0.2 0.4 0.6 0.8 V V BEsat 1.2 10 -1 0 50 100 C TA 150 4 2008-10-10 BCP51...-BCP53... Transition frequency fT = ƒ(IC) VCE = 10 V 10 3 MHz fT 5 W BCP 51...53 EHP00260 Total power dissipation Ptot = ƒ(TS) 2.4 10 2 P tot 5 10 1 10 0 10 1 10 2 10 3 1.6 1.2 0.8 0.4 mA 0 0 15 30 45 60 75 90 105 120 °C 150 ΙC TS Permissible Pulse Load RthJS = ƒ(tp ) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 2 10 3 Ptotmax /PtotDC - 10 1 10 2 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TP tp 5 2008-10-10 BCP51...-BCP53... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2008-10-10