BCP52

BCP51...BCP53 PNP Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54...BCP56 (NPN)



4 3 2 1 VPS05163 Type BCP51 BCP51-10 BCP51-16 BCP52 BCP52-10 BCP52-16 BCP53 BCP53-10 BCP53-16 Marking BCP 51 1=B BCP 51-10 1 = B BCP 51-16 1 = B BCP 52 1=B BCP 52-10 1 = B BCP 52-16 1 = B BCP 53 1=B BCP 53-10 1 = B BCP 53-16 1 = B Pin Configuration 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C 4=C Package SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 1 Nov-29-2001 BCP51...BCP53 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector-emitter voltage RBE 1k Symbol VCEO VCER VCBO VEBO BCP51 45 45 45 5 BCP52 60 60 60 5 BCP53 80 100 100 5 Unit V DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS 1For calculation of R thJA please refer to Application Note Thermal Resistance 
IC ICM IB IBM Ptot Tj Tstg 1 1.5 100 200 1.5 150 -65 ... 150 A mA W °C
17 K/W 2 Nov-29-2001 BCP51...BCP53 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO Symbol min. Values typ. max. Unit V 45 60 80 100 20 nA µA - BCP51 BCP52 BCP53 Collector-base breakdown voltage IC = 100 µA, IE = 0 V(BR)CBO BCP51 BCP52 BCP53 45 60 100 V(BR)EBO ICBO ICBO hFE hFE Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V 5 25 BCP51...53 hFE-grp.10 hFE-grp.16 40 63 100 hFE VCEsat VBE(ON) 100 160 - 250 160 250 0.5 1 V DC current gain 1) IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V 25 - AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz 1) Pulse test: t ≤=300µs, D = 2% fT - 125 - MHz 3 Nov-29-2001 BCP51...BCP53 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V 10 3 MHz fT 5 BCP 51...53 EHP00260 1.6 W 1.2 P tot 1 0.8 10 2 0.6 5 0.4 0.2 0 0 20 40 60 80 100 120 °C 150 10 1 10 0 10 1 10 2 mA 10 3 TS ΙC DC current gain hFE = f (IC) VCE = 2V BCP 51...53 EHP00261 Collector cutoff current ICBO = f (T A) VCB = 30V BCP 51...53 EHP00262 10 3 h FE 5 10 4 Ι CBO 100 C 25 C -50 C nA 10 3 max 10 5 2 10 2 10 1 typ 10 1 5 10 0 10 0 0 10 10 1 10 2 10 3 mA 10 4 10 -1 0 50 100 C TA 150 ΙC 4 Nov-29-2001 BCP51...BCP53 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 BCP 51...53 EHP00263 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 BCP 51...53 EHP00264 10 4 10 4 ΙC mA 10 3 100 C 25 C -50 C ΙC mA 10 3 5 100 C 25 C -50 C 10 2 10 2 5 10 1 10 1 5 10 0 0 0.2 0.4 0.6 0.8 V V BEsat 1.2 10 0 0 0.2 0.4 0.6 V V CEsat 0.8 Permissible pulse load Ptotmax / PtotDC = f (tp ) BCP 51...53 EHP00265 5 Ptot max Ptot DC 10 2 5 D= tp T tp T 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 tp s 10 0 5 Nov-29-2001