BCP54_08

BCP54...-BCP56... NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 2 1 3 Type BCP54 BCP54-16 BCP55 BCP55-16 BCP56-10 BCP56-16 Marking * * * * * * 1=B 1=B 1=B 1=B 1=B 1=B 2=C 2=C 2=C 2=C 2=C 2=C Pin Configuration 3=E 3=E 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C 4=C 4=C - Package SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 * Marking is the same as the type-name 1Pb-containing package may be available upon special request 1 2008-10-10 BCP54...-BCP56... Maximum Ratings Parameter Collector-emitter voltage BCP54 BCP55 BCP56 Collector-emitter voltage BCP54 BCP55 BCP56 Collector-base voltage BCP54 BCP55 BCP56 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 120°C VEBO IC I CM IB I BM Ptot Tj T stg VCBO VCER Symbol VCEO Value 45 60 80 45 60 100 45 60 100 5 1 1.5 100 200 2 150 -65 ... 150 Unit V A mA W °C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For Symbol RthJS Value ≤ 15 Unit K/W calculation of R thJA please refer to Application Note Thermal Resistance 2 2008-10-10 BCP54...-BCP56... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BCP54... IC = 10 mA, IB = 0 , BCP55... IC = 10 mA, IB = 0 , BCP56-10, -16 V(BR)CEO Symbol min. Values typ. max. Unit V 45 60 80 µA 100 160 0.1 20 25 40 63 100 25 250 160 250 0.5 1 V Collector-base breakdown voltage IC = 100 µA, IE = 0 , BCP54... IC = 100 µA, IE = 0 , BCP55... IC = 100 µA, IE = 0 , BCP56-10, -16 V(BR)CBO 45 60 100 V(BR)EBO I CBO Emitter-base breakdown voltage IE = 10 µA, IC = 0 5 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 °C DC current gain1) IC = 5 mA, VCE = 2 V IC = 150 mA, V CE = 2 V, BCP54/BCP55 IC = 150 mA, V CE = 2 V, BCP56-10 IC = 150 mA, V CE = 2 V, BCP54-16...BCP56-16 IC = 500 mA, V CE = 2 V h FE Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA VCEsat VBE(ON) - Base-emitter voltage1) IC = 500 mA, V CE = 2 V AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz 1Pulse fT - 100 - MHz test: t < 300µs; D < 2% 3 2008-10-10 BCP54...-BCP56... DC current gain hFE = ƒ(IC) VCE = 2 V 10 3 h FE 5 BCP 54...56 EHP00268 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 BCP 54...56 EHP00271 10 4 ΙC 100 C 25 C -50 C mA 10 3 10 2 5 10 2 100 C 25 C -50 C 10 1 5 10 1 10 0 0 10 10 0 10 1 10 2 10 3 mA 10 ΙC 4 0 0.2 0.4 0.6 V V CEsat 0.8 Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 10 4 BCP 54...56 EHP00270 Collector cutoff current ICBO = ƒ(TA) VCBO = 30 V 10 4 BCP 54...56 EHP00269 ΙC mA 10 3 Ι CBO nA 10 3 max 10 2 100 C 25 C -50 C 10 2 10 1 10 1 10 0 typ 10 0 0 0.2 0.4 0.6 0.8 V V BEsat 1.2 10 -1 0 50 100 C TA 150 4 2008-10-10 BCP54...-BCP56... Transition frequency fT = ƒ(IC) VCE = 10 V 10 3 fT MHz 5 W BCP 54...56 EHP00267 Total power dissipation Ptot = ƒ(TS) 2.4 10 2 P tot 1.6 1.2 5 0.8 0.4 10 1 10 0 5 10 1 5 10 2 mA 10 3 0 0 15 30 45 60 75 90 105 120 °C 150 ΙC TS Permissible Pulse Load RthJS = ƒ(tp ) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 2 10 3 Ptotmax /PtotDC - 10 1 10 2 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 2008-10-10 Package SOT223 BCP54...-BCP56... Package Outline A 6.5 ±0.2 3 ±0.1 4 1.6±0.1 0.1 MAX. 15˚ MAX. B 3.5 ±0.2 1 2 3 7 ±0.3 0.7 ±0.1 4.6 0.25 M A 2.3 0.5 MIN. 0.28 ±0.04 0...10˚ Foot Print 0.25 M B 3.5 1.4 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 1.4 4.8 8 0.3 MAX. 7.55 12 Pin 1 6.8 1.75 6 2008-10-10 BCP54...-BCP56... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2008-10-10