BCP69-10

BCP69 PNP Silicon AF Transistor For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP68 (NPN) 4 Thermal Resistance Junction - soldering point1) RthJS




3 2 1 VPS05163 Type BCP69 BCP69-10 BCP69-16 BCP69-25 Maximum Ratings Parameter Marking BCP 69 1=B BCP 69-10 1 = B BCP 69-16 1 = B BCP 69-25 1 = B Pin Configuration 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C Package SOT223 SOT223 SOT223 SOT223 Symbol VCEO VCES VCBO VEBO Values 20 25 25 5 1 2 100 200 1.5 150 -65 ... 150 Unit V V V A mA W °C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg
17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCP69 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 10 V DC current gain 1) IC = 500 mA, VCE = 1 V hFE hFE ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CES V(BR)CEO Symbol min. Values typ. max. Unit 20 25 25 5 50 - 100 100 - V nA µA - BCP69 BCP69-10 BCP69-16 BCP69-25 85 85 100 160 hFE VCEsat VBE(ON) 100 160 250 - 375 160 250 375 0.5 V DC current gain 1) IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage 1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V 60 - - 0.6 - 1 AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz 1) Pulse test: t ≤=300µs, D = 2% fT - 100 - MHz 2 Nov-29-2001 BCP69 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT 5 BCP 69 EHP00283 1.6 W 1.2 P tot 1 0.8 10 2 0.6 5 0.4 0.2 0 0 20 40 60 80 100 120 °C 150 10 1 0 10 10 1 10 2 mA 10 3 TS ΙC Collector cutoff current ICBO = f (TA) VCB = 25V 10 5 BCP 69 EHP00284 DC current gain hFE = f (I C) VCE = 1V 10 3 h FE 5 100 ˚C 10 2 5 25 ˚C -50 ˚C BCP 69 EHP00285 Ι CBO nA 10 4 10 3 max 10 2 typ 10 1 10 1 5 10 0 0 50 100 ˚C TA 150 10 0 10 0 10 1 10 2 mA 10 4 ΙC 3 Nov-29-2001 BCP69 Collector-emitter saturation voltage IC = f (VCEsat ), hFE = 10 BCP 69 EHP00286 Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 BCP 69 EHP00287 10 4 10 4 mA ΙC mA ΙC 10 3 100 ˚C 25 ˚C -50 ˚C 10 3 5 100 ˚C 25 ˚C -50 ˚C 10 2 5 10 2 10 1 5 10 1 10 0 0 0.2 0.4 0.6 V 0.8 10 0 0 0.2 0.4 0.6 0.8 V V BEsat 1.2 V CEsat Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max Ptot DC 10 2 5 BCP 69 EHP00288 D= tp T tp T 10 1 5 D = 0.0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 10 -6 10 -5 10 -4 10 -3 10 -2 tp s 10 1 4 Nov-29-2001