BCP69_08

BCP69... PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCP68 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 2 1 3 Type BCP69-25 Marking ...-25* 1=B 2=C Pin Configuration 3=E 4=C - Package SOT223 * Marking is the same than type-name Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 114 °C Junction temperature Storage temperature 1Pb-containing Symbol VCEO VCES VCBO VEBO IC I CM IB I BM Ptot Tj T stg Value 20 25 25 5 1 2 100 200 3 150 -65 ... 150 Unit V A mA W °C package may be available upon special request 1 2008-10-10 BCP69... Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 25 V, IE = 0 VCB = 25 V, IE = 0 , TA = 150 °C DC current gain2) IC = 5 mA, VCE = 10 V IC = 500 mA, V CE = 1 V, BCP69-16 IC = 500 mA, V CE = 1 V, BCP69-25 IC = 1 A, VCE = 1 V Collector-emitter saturation voltage2) IC = 1 A, IB = 100 mA Base-emitter voltage2) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V VBE(ON) 0.6 1 VCEsat h FE 50 100 160 60 160 250 250 375 0.5 V I CBO 0.1 100 µA V(BR)EBO 5 V(BR)CES 25 V(BR)CBO 25 V(BR)CEO 20 V Value ≤ 12 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values typ. max. Unit AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz 1For fT - 100 - MHz calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2Pulse 2 2008-10-10 BCP69... DC current gain hFE = ƒ(IC) VCE = 1 V 10 3 h FE 5 100 ˚C 10 3 BCP 69 EHP00285 Collector-emitter saturation voltage IC = ƒ(VCEsat), hFE = 10 10 4 BCP 69 EHP00286 ΙC mA 10 2 5 25 ˚C -50 ˚C 5 100 ˚C 25 ˚C -50 ˚C 10 2 5 10 1 5 10 1 5 10 0 10 0 10 0 10 1 10 2 mA 10 4 0 0.2 0.4 0.6 V 0.8 ΙC V CEsat Base-emitter saturation voltage IC = ƒ(V BEsat), hFE = 10 10 4 mA BCP 69 EHP00287 Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V 10 5 BCP 69 EHP00284 ΙC 10 3 Ι CBO 100 ˚C 25 ˚C -50 ˚C nA 10 4 10 3 10 2 max 10 2 10 1 typ 10 1 10 0 0 0.2 0.4 0.6 0.8 V V BEsat 1.2 10 0 0 50 100 ˚C TA 150 3 2008-10-10 BCP69... Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 MHz fT 5 2.5 BCP 69 EHP00283 Total power dissipation Ptot = ƒ(TS) 3.5 W P tot 2 10 2 1.5 5 1 0.5 10 1 0 10 10 1 10 2 mA 10 3 0 0 15 30 45 60 75 90 105 120 °C 150 ΙC ts Permissible Pulse Load RthJS = ƒ(tp ) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 2 10 3 Ptotmax /PtotDC - 10 1 10 2 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 2008-10-10 Package SOT223 BCP69... Package Outline A 6.5 ±0.2 3 ±0.1 4 1.6±0.1 0.1 MAX. 15˚ MAX. B 3.5 ±0.2 1 2 3 7 ±0.3 0.7 ±0.1 4.6 0.25 M A 2.3 0.5 MIN. 0.28 ±0.04 0...10˚ Foot Print 0.25 M B 3.5 1.4 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 1.4 4.8 8 0.3 MAX. 7.55 12 Pin 1 6.8 1.75 5 2008-10-10 BCP69... Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2008-10-10