BCR08PN

BCR08PN NPN/PNP Silicon Digital Transistor Array 4 Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor (R1=2.2k , R2=47k )   5 6


2 1 3 VPS05604 Tape loading orientation Top View 654 W1s 123 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side EHA07193 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 6 B2 5 E2 4 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07176 TR2 R1 Type BCR08PN Maximum Ratings Parameter Marking WFs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 5 10 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 1) RthJS
140 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCR08PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Resistor ratio AC Characteristics Transition frequency I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb fT R1 /R2 Input resistor Vi(on) R1 Vi(off) VCEsat hFE IEBO ICBO V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit 50 50 70 0.4 0.5 1.5 0.042 2.2 0.047 100 164 0.3 0.8 1.1 2.9 V nA µA V 0.052 - - 170 2 - MHz pF 1) Pulse test: t < 300 s; D < 2% 2 Nov-29-2001
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BCR08PN NPN Type DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration) 10 3 Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20 10 2 mA hFE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 10 10 mA 10 2 10 0 0.0 0.1 0.2 0.3 V 0.5 IC VCEsat Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 0 1 10 10 V 10 2 10 -3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0 Vi(on) Vi(off) 3 Nov-29-2001 BCR08PN PNP Type DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration) 10 3 Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20 10 2 mA hFE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 10 10 mA 10 2 10 0 0.0 0.1 0.2 0.3 V 0.5 IC VCEsat Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage V i(off) = f (IC) VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 0 1 10 10 V 10 2 10 -3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0 Vi(on) Vi(off) 4 Nov-29-2001 BCR08PN Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Nov-29-2001