BCR108.../SEMH10
NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 =2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package
BCR108/F/L3 BCR108T/W
C 3
BCR108S SEMH10
C1 6 B2 5 E2 4
R1
R1
R2 TR2 R1 R2 TR1
R2
1 B
2 E
EHA07184
1 E1
2 B1
3 C2
EHA07174
Type BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W SEMH10
Marking WHs WHs WH WHs WHs WHs WH 1=B 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C -
Package SOT23 TSFP-3 TSLP-3-4 SC75 SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
Jun-14-2004
BCR108.../SEMH10
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR108, TS ≤ 102°C BCR108F, TS ≤ 128°C BCR108L3, TS ≤ 135°C BCR108S, T S ≤ 115°C BCR108T, TS ≤ 109°C BCR108W, TS ≤ 124°C SEMH10, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR108 BCR108F BCR108L3 BCR108S BCR108T BCR108W SEMH10
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol VCEO VCBO VEBO Vi(on) IC Ptot
Value 50 50 5 10 100 200 250 250 250 250 250 250
Unit V
mA mW
Tj Tstg Symbol RthJS
150 -65 ... 150 Value
≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300
°C
Unit K/W
2
Jun-14-2004
BCR108.../SEMH10
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V
IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2
50 70 0.4 0.5 1.5 0.042
2.2 0.047
100 164 0.3 0.8 1.1 2.9
kΩ
Collector-base cutoff current
VCB = 40 V, IE = 0
nA µA V
Emitter-base cutoff current
VEB = 5 V, IC = 0
DC current gain1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 2 mA, VCE = 0.3 V
Input resistor Resistor ratio
0.052 -
AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 1 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz
1Pulse test: t < 300µs; D < 2%
fT Ccb
-
170 2
-
MHz pF
3
Jun-14-2004
BCR108.../SEMH10
DC current gain hFE = ƒ(IC) VCE = 5V (common emitter configuration)
10 3
Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20
10 2
mA
h FE
10 2
IC
10 1 10 1 10 0 -1 10
0 1
10
10
mA
10
2
10 0 0
0.1
0.2
0.3
V
0.5
IC
VCEsat
Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration)
10 1
mA
mA
10 0 10 1
IC
IC
10 -1 10 0 10 -2 10 -1 -1 10
0 1
10
10
V
10
2
10 -3 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1
Vi(on)
Vi(off)
4
Jun-14-2004
BCR108.../SEMH10
Total power dissipation Ptot = ƒ(TS) BCR108
300
Total power dissipation Ptot = ƒ(TS) BCR108F
300
mW
mW
P tot
150
P tot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
Total power dissipation Ptot = ƒ(TS) BCR108L3
300
Total power dissipation Ptot = ƒ(TS) BCR108S
300
mW
mW
Ptot
150
Ptot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
5
Jun-14-2004
BCR108.../SEMH10
Total power dissipation Ptot = ƒ(TS) BCR108T
300
Total power dissipation Ptot = ƒ(TS) BCR108W
300
mW
mW
P tot
150
P tot
120 °C
200
200
150
100
100
50
50
0 0
20
40
60
80
100
150
0 0
20
40
60
80
100
120 °C
150
TS
TS
Total power dissipation Ptot = ƒ(TS) SEMH10
300
mW
Ptot
200
150
100
50
0 0
20
40
60
80
100
120 °C
150
TS
6
Jun-14-2004
BCR108.../SEMH10
Permissible Pulse Load RthJS = ƒ(tp ) BCR108
10 3
K/W
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR108
10 3
10 2
P totmax / P totDC
-
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Permissible Puls Load RthJS = ƒ (tp) BCR108F
10 2
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR108F
10 3
10 1
10 0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
Ptotmax /PtotDC
K/W
RthJS
10 2
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
7
Jun-14-2004
BCR108.../SEMH10
Permissible Puls Load RthJS = ƒ (tp) BCR108L3
10 2
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR108L3
10 3
Ptotmax/ P totDC
10 1
10 2
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Permissible Puls Load RthJS = ƒ (tp) BCR108S
10 3
K/W
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR108S
10 3
10 2
Ptotmax / PtotDC
-
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
8
Jun-14-2004
BCR108.../SEMH10
Permissible Puls Load RthJS = ƒ (tp) BCR108T
10 3
K/W
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR108T
10 3
10 2
P totmax / P totDC
10 2
10 1
10 0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
Permissible Puls Load RthJS = ƒ (tp) BCR108W
10 3
K/W
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR108W
10 3
10 2
Ptotmax / PtotDC
-
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
9
Jun-14-2004
BCR108.../SEMH10
Permissible Puls Load RthJS = ƒ (tp) SEMH10
10 3
K/W
Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) SEMH10
10 3
10 2
P totmax/ P totDC
RthJS
10 2
10 1
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 -1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
10
Jun-14-2004
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