BCR112T

BCR112... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=4.7kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR112/F/L3 BCR112T/W C 3 BCR112U C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type Marking Pin Configuration Package BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W WFs WFs WF WFs WFs WFs 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1 Aug-29-2003 BCR112... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR112, TS ≤102°C BCR112F, TS ≤128°C BCR112L3, TS ≤135°C BCR112T, TS ≤109°C BCR112U, TS ≤118°C BCR112W, TS ≤124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR112 BCR112F BCR112L3 BCR112T BCR112U BCR112W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 15 100 200 250 250 250 250 250 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133 ≤ 105 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W 2 Aug-29-2003 BCR112... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 20 0.8 1 3.2 0.9 - 4.7 1 140 3 100 1.61 0.3 1.5 2.5 6.2 1.1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA mA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% MHz pF fT Ccb 3 Aug-29-2003 BCR112... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 - Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 2 10 2 mA h FE 10 1 IC 10 1 10 0 10 -1 -1 10 0 1 2 10 10 10 mA 10 3 10 0 0 0.1 0.2 0.3 V 0.5 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 3 mA Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 mA 10 2 10 0 IC 10 1 IC 10 -1 10 0 10 -1 0 10 1 10 V 10 2 10 -2 1 1.2 1.4 1.6 V 2 Vi(on) Vi(off) 4 Aug-29-2003 BCR112... Total power dissipation Ptot = ƒ(TS) BCR112 300 Total power dissipation Ptot = ƒ(TS) BCR112F 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR112L3 300 Total power dissipation Ptot = ƒ(TS) BCR112T 300 mW mW Ptot 150 Ptot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS 5 Aug-29-2003 BCR112... Total power dissipation Ptot = ƒ(TS) BCR112U 300 Total power dissipation Ptot = ƒ(TS) BCR112W 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Permissible Pulse Load RthJS = ƒ(tp ) BCR112 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR112 10 3 10 2 Ptotmax / PtotDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 6 Aug-29-2003 BCR112... Permissible Puls Load RthJS = ƒ (tp) BCR112F 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR112F 10 3 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 P totmax/P totDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR112L3 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR112L3 10 3 Ptotmax/ PtotDC 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 Aug-29-2003 BCR112... Permissible Puls Load RthJS = ƒ (tp) BCR112T 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR112T 10 3 10 2 P totmax / P totDC 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR112U 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR112U 10 3 Ptotmax / PtotDC 10 2 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 Aug-29-2003 BCR112... Permissible Puls Load RthJS = ƒ (tp) BCR112W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR112W 10 3 10 2 P totmax / P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 R thJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 9 Aug-29-2003