BCR141W

BCR141... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ) • BCR141S : Two internally isolated transistors with good matching in one multichip package • BCR141S: For orientation in reel see package information below • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BCR141W C 3 BCR141S C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07184 1 E1 2 B1 3 C2 EHA07174 Type BCR141 BCR141S BCR141W 1Pb-containing Marking WDs WDs WDs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C - Package SOT23 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 package may be available upon special request 1 2010-06-07 BCR141... Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationBCR141, TS ≤ 118°C BCR141S, T S ≤ 115°C BCR141W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR141 BCR141S BCR141W 1For Symbol VCEO VCBO Vi(fwd) Vi(rev) IC Ptot Value 50 50 60 10 100 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 130 ≤ 90 ≤ 140 °C Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2010-06-07 BCR141... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 fT Ccb 50 50 0.8 1 15 0.9 - 22 1 130 3 100 350 0.3 1.5 2.5 29 1.1 - nA µA V kΩ MHz pF test: t < 300µs; D < 2% 3 2010-06-07 BCR141... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), IC/IB = 20 1 V 0.8 V CEsat h FE 10 2 0.7 0.6 0.5 0.4 -40 °C -25 °C 25 °C 85 °C 125 °C 10 1 -40 °C -25 °C 25 °C 85 °C 125 °C 0.3 0.2 0.1 10 0 -4 10 10 -3 10 -2 A 10 -1 0 -3 10 10 -2 A 10 -1 IC IC Input on Voltage Vi(on) = ƒ(IC ) VCE = 0.3V (common emitter voltage) 10 2 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter voltage) 10 1 V Vi(off) Vi(on) 10 1 -40 °C -25 °C 25 °C 85 °C 125 °C V -40 °C -25 °C 25 °C 85 °C 125 °C 10 0 10 0 10 -1 -5 10 10 -4 10 -3 10 -2 A 10 -1 10 -1 -5 10 10 -4 10 -3 10 -2 A 10 -1 IC IC 4 2010-06-07 BCR141... Total power dissipation Ptot = ƒ(TS) BCR141 300 mW Total power dissipation Ptot = ƒ(TS) BCR141S 300 mW 250 225 250 225 P tot 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 P tot 200 200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR141W 300 mW Permissible Pulse Load RthJS = ƒ(t p) BCR141 10 3 K/W 250 225 10 2 Ptot 200 175 150 125 100 75 50 25 0 0 15 30 45 60 75 90 105 120 °C 150 RthJS 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp 5 2010-06-07 BCR141... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR141 10 3 Permissible Puls Load R thJS = ƒ (tp) BCR141S 10 3 K/W P totmax / P totDC - 10 2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR141S 10 3 Permissible Puls Load R thJS = ƒ (tp) BCR141W 10 3 K/W Ptotmax / PtotDC - 10 2 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 6 2010-06-07 BCR141... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR141W 10 3 P totmax / P totDC - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 2010-06-07 Package SOT23 BCR141... Package Outline 0.15 MIN. 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.9 ±0.1 3 B 2.4 ±0.15 10˚ MAX. 0.4 +0.1 -0.05 1) 1 2 10˚ MAX. C 0.95 1.9 0.08...0.1 A 5 0...8˚ 0.25 M B C 0.2 M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s Pin 1 0.9 1.3 2005, June Date code (YM) BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.9 2.13 2.65 0.2 8 Pin 1 3.15 1.15 8 2010-06-07 Package SOT323 BCR141... Package Outline 2 ±0.2 0.3 +0.1 -0.05 3 1.25 ±0.1 2.1 ±0.1 0.9 ±0.1 3x 0.1 M 0.1 MAX. 0.1 A 1 0.65 0.65 2 0.1 MIN. 0.15 +0.1 -0.05 0.2 M A Foot Print 0.6 0.8 0.65 0.65 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BCR108W Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 9 2010-06-07 Package SOT363 BCR141... Package Outline 2 ±0.2 0.2 -0.05 +0.1 0.9 ±0.1 6x 0.1 4 1.25 ±0.1 2.1 ±0.1 M 0.1 MAX. 0.1 A 6 5 Pin 1 marking 1 2 3 0.1 MIN. 0.65 0.65 0.2 M 0.15 +0.1 -0.05 A Foot Print 0.3 0.9 0.7 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.6 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 2.3 8 Pin 1 marking 2.15 1.1 10 2010-06-07 BCR141... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2010-06-07