BCR151F

BCR151... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 100kΩ , R2 = 100kΩ) BCR151F/L3 BCR151T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR151F* BCR151L3* BCR151T* * Preliminary Maximum Ratings Parameter UDs UD UDs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - TSFP-3 TSLP-3-4 SC75 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 50 50 250 250 250 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR151F, TS ≤ 128°C BCR151L3, TS ≤ 135°C BCR151T, TS ≤ 109°C Junction temperature Storage temperature 1 mA mW Tj Tstg 150 -65 ... 150 °C Dec-09-2003 BCR151... Thermal Resistance Parameter Junction - soldering point1) BCR151F BCR151L3 BCR151T Symbol RthJS Value ≤ 90 ≤ 60 ≤ 165 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 fT Ccb 50 70 0.5 1 70 0.9 - 100 1 120 3 100 75 0.3 1.8 3 130 1.1 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 5 mA, IB = 0.25 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 1 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz MHz pF Collector-base capacitance VCB = 10 V, f = 100 MHz 1For calculation of R thJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 Dec-09-2003 BCR151... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 -1 A h FE 10 -2 10 2 IC 10 -3 10 1 -4 10 -3 -2 10 10 A 10 -1 10 -4 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 V 0.5 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 -1 A Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 -2 A 10 -2 10 -3 IC 10 -3 IC 10 -4 10 -4 10 -5 10 -5 -1 10 0 1 10 10 V 10 2 10 -6 0.5 1 1.5 2 2.5 3 V 4 Vi(on) Vi(off) 3 Dec-09-2003 BCR151... Total power dissipation Ptot = ƒ(TS) BCR151F 300 Total power dissipation Ptot = ƒ(TS) BCR151L3 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR151T 300 Permissible Puls Load R thJS = ƒ (tp) BCR151F 10 2 mW K/W Ptot 200 10 1 150 100 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 50 RthJS 0 0 20 40 60 80 100 120 °C 150 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp 4 Dec-09-2003 BCR151... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR151F 10 3 Permissible Puls Load R thJS = ƒ (tp) BCR151L3 10 2 P totmax/P totDC 10 2 RthJS 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR151L3 10 3 Permissible Puls Load R thJS = ƒ (tp) BCR151T 10 3 K/W Ptotmax/ PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS 10 1 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Dec-09-2003 BCR151... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR151T 10 3 P totmax / P totDC 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 Dec-09-2003