BCR158

BCR158.../SEMB10 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR158/F/L3 BCR158T/W C 3 SEMB10 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type BCR158 BCR158L3 BCR158F BCR158T BCR158W SEMB10 Marking WIs WI WIs WIs WIs W5 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - Package SOT23 TSFP-3 TSFP-3 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 May-18-2004 BCR158.../SEMB10 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR158, TS ≤ 102°C BCR158F, TS ≤ 128°C BCR158L3, TS ≤ 135°C BCR158T, TS ≤ 109°C BCR158W, TS ≤ 124°C SEMB10, T S ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR158 BCR158F BCR158L3 BCR158T BCR158W SEMB10 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 10 100 200 250 250 250 250 250 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 105 ≤ 300 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W 2 May-18-2004 BCR158.../SEMB10 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 fT Ccb 50 70 0.4 0.5 1.5 0.042 - 2.2 0.047 200 3 100 164 0.3 0.8 1.1 2.9 kΩ nA µA V 0.052 MHz pF 3 May-18-2004 BCR158.../SEMB10 DC current gain hFE = ƒ(IC) VCE = 5V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 2 mA h FE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 10 10 mA 10 2 10 0 0 0.1 0.2 0.3 V 0.5 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 0 1 10 10 V 10 2 10 -3 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1 Vi(on) Vi(off) 4 May-18-2004 BCR158.../SEMB10 Total power dissipation Ptot = ƒ(TS) BCR158 300 Total power dissipation Ptot = ƒ(TS) BCR158F 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR158L3 300 Total power dissipation Ptot = ƒ(TS) BCR158T 300 mW mW Ptot 150 Ptot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS 5 May-18-2004 BCR158.../SEMB10 Total power dissipation Ptot = ƒ(TS) BCR158W 300 Total power dissipation Ptot = ƒ(TS) SEMB10 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Permissible Pulse Load RthJS = ƒ(tp ) BCR158 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR158 10 3 10 2 Ptotmax / PtotDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 6 May-18-2004 BCR158.../SEMB10 Permissible Puls Load RthJS = ƒ (tp) BCR158F 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR158F 10 3 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 P totmax/P totDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR158L3 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR158L3 10 3 Ptotmax/ PtotDC 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 May-18-2004 BCR158.../SEMB10 Permissible Puls Load RthJS = ƒ (tp) BCR158T 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR158T 10 3 10 2 P totmax / P totDC 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR158W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR158W 10 3 10 2 Ptotmax / PtotDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 May-18-2004 BCR158.../SEMB10 Permissible Puls Load RthJS = ƒ (tp) SEMB10 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) SEMB10 10 3 10 2 P totmax/ P totDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 9 May-18-2004