BCR164

BCR164... PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ , R2 = 10kΩ ) BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F* BCR164L3* BCR164T* * Preliminary Maximum Ratings Parameter U6s U6 U6s 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - TSFP-3 TSLP-3-4 SC75 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 15 100 250 250 250 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR164F, TS ≤ 128°C BCR164L3, TS ≤ 135°C BCR164T, TS ≤ 109°C Junction temperature Storage temperature 1 mA mW Tj Tstg 150 -65 ... 150 °C Sep-03-2003 BCR164... Thermal Resistance Parameter Junction - soldering point1) BCR164F BCR164L3 BCR164T Symbol RthJS Value ≤ 90 ≤ 60 ≤ 165 Unit - Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 30 0.5 0.5 3.2 0.42 - 4.7 0.47 160 3 100 520 0.3 1.1 1.4 6.2 0.52 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain2) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz MHz pF fT Ccb 1For calculation of R thJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 Sep-03-2003 BCR164... DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 -1 A h FE 10 2 IC 10 -2 10 1 10 0 -4 10 -3 -2 10 10 A 10 -1 10 -3 0 0.1 0.2 0.3 V 0.5 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 -1 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 -2 A A 10 -3 10 -2 IC IC 10 -4 10 -3 10 -5 10 -4 -1 10 0 1 10 10 V 10 2 10 -6 0 0.5 1 V 2 Vi(on) Vi(off) 3 Sep-03-2003 BCR164... Total power dissipation Ptot = ƒ(TS) BCR164F 300 Total power dissipation Ptot = ƒ(TS) BCR164L3 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR164T 300 Permissible Puls Load R thJS = ƒ (tp) BCR164F 10 2 mW K/W Ptot 200 10 1 150 100 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 50 RthJS 0 0 20 40 60 80 100 120 °C 150 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp 4 Sep-03-2003 BCR164... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR164F 10 3 Permissible Puls Load R thJS = ƒ (tp) BCR164L3 10 2 P totmax/P totDC 10 2 RthJS 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR164L3 10 3 Permissible Puls Load R thJS = ƒ (tp) BCR164T 10 3 K/W Ptotmax/ PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 RthJS 10 1 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Sep-03-2003 BCR164... Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR164T 10 3 P totmax / P totDC 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 6 Sep-03-2003