BCR179L3

BCR179.../SEMB4 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit. • Built in bias resistor (R1 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR179F/L3 BCR179T C 3 SEMB4 C1 6 B2 5 E2 4 R1 R1 TR1 R1 TR2 1 B 2 E EHA07180 1 E1 2 B1 3 C2 EHA07266 Type BCR179F BCR179L3 BCR179T SEMB4 Marking WWs WW WWs WW 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 3=C 3=C 3=C - Package TSFP-3 TSLP-3-4 SC75 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 May-17-2004 BCR179.../SEMB4 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipation BCR179F, TS ≤ 128°C BCR179L3, TS ≤ 135°C BCR179T, TS ≤ 109°C SEMB4, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR179F BCR179L3 BCR179T SEMB4 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 20 100 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 150 ... -65 Value ≤ 90 ≤ 60 ≤ 109 ≤ 300 °C Unit K/W 2 May-17-2004 BCR179.../SEMB4 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 40 V, IE = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0,5 mA Input off voltage IC = 100 °C, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0,3 V Input resistor AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz fT Ccb V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1 50 5 120 0,4 0,5 7 - 10 150 1,2 100 630 0,3 1 1,1 13 kΩ nA V MHz pF Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 3 May-17-2004 BCR179.../SEMB4 DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 -1 A h FE 10 -2 10 2 IC 10 -3 10 1 -4 10 -3 -2 10 10 A 10 -1 10 -4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 -1 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 -2 A A 10 -3 10 -2 IC IC 10 -4 10 -3 10 -5 10 -4 -1 10 0 1 10 10 V 10 2 10 -6 0 0.5 1 V 2 Vi(on) Vi(off) 4 May-17-2004 BCR179.../SEMB4 Total power dissipation Ptot = ƒ(TS) BCR179F 300 Total power dissipation Ptot = ƒ(TS) BCR179L3 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR179T 300 Total power dissipation Ptot = ƒ(TS) SEMB4 300 mW mW Ptot 150 Ptot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS 5 May-17-2004 BCR179.../SEMB4 Permissible Puls Load RthJS = ƒ (tp) BCR179F 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR179F 10 3 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 P totmax/P totDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR179L3 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR179L3 10 3 Ptotmax/ PtotDC 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 6 May-17-2004 BCR179.../SEMB4 Permissible Puls Load RthJS = ƒ (tp) BCR179T 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR179T 10 3 10 2 P totmax / P totDC 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) SEMB4 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) SEMB4 10 3 10 2 Ptotmax / PtotDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 May-17-2004