BCR185S

厂商：
INFINEON
封装：
描述：
BCR185S - PNP Silicon Digital Transistor - Infineon Technologies AG

数据手册：

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详情介绍
数据手册
价格&库存

BCR185S 数据手册

BCR185.../SEMB9 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 47kΩ ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR185/F/L3 BCR185T/W C 3 BCR185S/U SEMB9 C1 6 B2 5 E2 4 R1 R1 R2 TR2 R1 R2 TR1 R2 1 B 2 E EHA07183 1 E1 2 B1 3 C2 EHA07173 Type Marking Pin Configuration Package BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U BCR185W SEMB9 WNs WNs WN WNs WNs WNs WNs WN 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C - - - SOT23 TSFP-3 TSLP-3-4 SC75 SOT323 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 1 Jun-14-2004 BCR185.../SEMB9 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR185 TS ≤ 102°C BCR185F, TS ≤ 128°C BCR185L3, TS ≤ 135°C BCR185S, T S ≤ 115°C BCR185T, TS ≤ 109°C BCR185U, TS ≤ 118°C BCR185W, TS ≤ 124°C SEMB9, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR185 BCR185F BCR185L3 BCR185S BCR185T BCR185U BCR185W SEMB9 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 6 20 100 200 250 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 ≤ 300 °C Unit K/W 2 Jun-14-2004 BCR185.../SEMB9 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 70 0,5 0,5 7 0,19 10 0,21 100 167 0,3 1 1,4 13 0,24 kΩ Collector-base cutoff current VCB = 40 V, IE = 0 nA µA V Emitter-base cutoff current VEB = 6 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0,5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on voltage IC = 2 mA, VCE = 0,3 V Input resistor Resistor ratio - AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% fT Ccb - 200 3 - MHz pF 3 Jun-14-2004 BCR185.../SEMB9 DC current gain hFE = ƒ(IC) VCE = 5 V (common emitter configuration) 10 3 Collector-emitter saturation voltage VCEsat = ƒ(IC), hFE = 20 10 2 mA h FE 10 2 IC 10 1 10 1 10 0 -1 10 0 1 10 10 mA 10 2 10 0 0 0.2 0.4 0.6 V 1 IC VCEsat Input on Voltage Vi(on) = ƒ(I C) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage V i(off) = ƒ(IC) VCE = 5V (common emitter configuration) 10 1 mA mA 10 0 10 1 IC IC 10 -1 10 0 10 -2 10 -1 -1 10 0 1 10 10 V 10 2 10 -3 0 0.5 1 V 2 Vi(on) Vi(off) 4 Jun-14-2004 BCR185.../SEMB9 Total power dissipation Ptot = ƒ(TS) BCR185 300 Total power dissipation Ptot = ƒ(TS) BCR185F 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR185L3 300 Total power dissipation Ptot = ƒ(TS) BCR185S 300 mW mW Ptot 150 Ptot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS 5 Jun-14-2004 BCR185.../SEMB9 Total power dissipation Ptot = ƒ(TS) BCR185T 300 Total power dissipation Ptot = ƒ(TS) BCR185U 300 mW mW P tot 150 P tot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS Total power dissipation Ptot = ƒ(TS) BCR185W 300 Total power dissipation Ptot = ƒ(TS) SEMB9 300 mW mW Ptot 150 Ptot 120 °C 200 200 150 100 100 50 50 0 0 20 40 60 80 100 150 0 0 20 40 60 80 100 120 °C 150 TS TS 6 Jun-14-2004 BCR185.../SEMB9 Permissible Pulse Load RthJS = ƒ(tp ) BCR185 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR185 10 3 10 2 P totmax / P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR185F 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR185F 10 3 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 Ptotmax /PtotDC K/W RthJS 10 2 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 7 Jun-14-2004 BCR185.../SEMB9 Permissible Puls Load RthJS = ƒ (tp) BCR185L3 10 2 Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR185L3 10 3 Ptotmax/ P totDC 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR185S 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR185S 10 3 10 2 Ptotmax / PtotDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 8 Jun-14-2004 BCR185.../SEMB9 Permissible Puls Load RthJS = ƒ (tp) BCR185T 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR185T 10 3 10 2 P totmax / P totDC 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) BCR185U 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR185U 10 3 Ptotmax / PtotDC 10 2 10 2 10 1 10 0 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 9 Jun-14-2004 BCR185.../SEMB9 Permissible Puls Load RthJS = ƒ (tp) BCR185W 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) BCR185W 10 3 10 2 P totmax / P totDC - 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 R thJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Permissible Puls Load RthJS = ƒ (tp) SEMB9 10 3 K/W Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) SEMB9 10 3 10 2 Ptotmax / PtotDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 10 Jun-14-2004

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BCR185S

1. 物料型号： - BCR185/F/L3/S/T/U/W - SEMB9

2. 器件简介： - 这些是PNP型硅数字晶体管，适用于开关电路、反相器、接口电路和驱动电路。 - 内置偏置电阻（R1 = 10kΩ, R2 = 47kΩ）的驱动电路。 - 对于6引脚封装，一个封装内有两个（电气）内部隔离的晶体管，具有良好的匹配性。

3. 引脚分配： - BCR185: 1=B, 2=E, 3=C - BCR185F: 1=B, 2=E, 3=C - BCR185L3: 1=B, 2=E, 3=C - BCR185S: 1=E1, 2=B1, 3=C2, 4=E2, 5=B2, 6=C1 - BCR185T: 1=B, 2=E, 3=C - BCR185U: 1=E1, 2=B1, 3=C2, 4=E2, 5=B2, 6=C1 - BCR185W: 1=B, 2=E, 3=C - SEMB9: 1=E1, 2=B1, 3=C2, 4=E2, 5=B2, 6=C1

4. 参数特性： - 最大额定值： - 集电极-发射极电压（VCEO）：50V - 集电极-基极电压（VCBO）：50V - 发射极-基极电压（VEBO）：6V - 输入开启电压（Vi(on)）：20V - 集电极电流（Ic）：100mA - 总功率耗散（Ptot）：不同型号在不同结温下有不同的值，范围在200mW到250mW之间。 - 热阻（RthJs）：不同型号有不同的热阻值，范围在60K/W到300K/W之间。

5. 功能详解和应用信息： - 这些晶体管主要用于数字电路中的开关和驱动，由于其内置偏置电阻，可以直接用于驱动电路，简化设计。

6. 封装信息： - SOT23, TSFP-3, TSLP-3-4, SOT363, SC75, SC74, SOT323, SOT666 - 这些封装类型涵盖了从小尺寸的表面贴装封装到较大的塑料封装，适用于不同的应用场景和空间要求。

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